The use of atmospheric pressure MOVPE for the growth of high performance uncooled 1300 nm DFB lasers

Abstract

Manufacture of high performance uncooled 1300 nm distributed feed-back (DFB) lasers operating single mode over the −40 to +85°C range requires control of the wavelength variation across a 2″ wafer to less than 10nm and preservation of grating definition during processing and regrowth. We have used atmospheric pressure metalorganic vapor phase epitaxy, without substrate rotation to achieve the necessary uniformity. Material was assessed using photoluminescence, x-ray diffraction, transmission electron microscopy, electrochemical current/voltage profiling, and secondary ion mass spectroscopy. The devices are based on a strained quantum well structure with an n-type grating layer to provide gain coupling. The best result gave a wavelength spread across 32×32 mm center square of a 2″ InP wafer of 3 nm. Buried heterostructure DFBs manufactured with high yield in this way operate from −40 to +85°C, with thresholds at 85°C as low as 18 mA.