Abstract
We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult and time-consuming to obtain after growth.
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Kussmaul, A., Vernon, S., Colter, P.C. et al. In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs. J. Electron. Mater. 26, 1145–1153 (1997). https://doi.org/10.1007/s11664-997-0011-1
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DOI: https://doi.org/10.1007/s11664-997-0011-1