The effect of substrate surface roughness on GaN growth using MOCVD process Dongwha KumDongjin Byun Special Issue Paper Pages: 1098 - 1102
Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy H. LaknerG. BrocktA. Sohmer Special Issue Paper Pages: 1103 - 1108
Stability and interface abruptness of InxGa1−xN/InyGa1−yN multiple quantum well structures grown by OMVPE J. C. RamerD. ZubiaS. D. Hersee Special Issue Paper Pages: 1109 - 1113
Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach J. T. KobayashiN. P. KobayashiP. D. Dapkus Special Issue Paper Pages: 1114 - 1117
Flow modulation epitaxy of indium gallium nitride S. KellerU. K. MishraS. P. Denbaars Special Issue Paper Pages: 1118 - 1122
Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization R. BeccardO. SchoenE. Woelk Special Issue Paper Pages: 1123 - 1126
Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O R. NiebuhrK. H. BachemH. Jürgensen Special Issue Paper Pages: 1127 - 1130
The use of atmospheric pressure MOVPE for the growth of high performance uncooled 1300 nm DFB lasers A. J. TaylorA. S. BridgesW. S. Ring Special Issue Paper Pages: 1131 - 1133
GaAs microlens arrays grown by shadow masked MOVPE G. M. PeakeS. Z. SunS. D. Hersee Special Issue Paper Pages: 1134 - 1138
Metalorganic vapor phase epitaxial growth of all-AlGaAs visible (∼700 nm) vertical-cavity surface-emitting lasers on misoriented substrates H. Q. HouM. Hagerott CrawfordR. J. Hickman Special Issue Paper Pages: 1140 - 1144
In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs A. KussmaulS. VernonM. A. Dahleh Special Issue Paper Pages: 1145 - 1153
On-line growth monitoring of InP-based device structures by reflectance anisotropy spectroscopy P. KurpasM. SatoM. Weyers Special Issue Paper Pages: 1154 - 1158
Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy P. KurpasA. OsterW. Richter Special Issue Paper Pages: 1159 - 1163
Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD Y. D. KimF. NakamuraJ. J. Coleman Special Issue Paper Pages: 1164 - 1168
Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs P. YeoR. ArèsA. C. Jones Special Issue Paper Pages: 1174 - 1177
Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor H. Q. HouW. G. BreilandR. A. Stall Special Issue Paper Pages: 1178 - 1183
Role of high energy photons in dual spectral source rapid isothermal CVD R. SinghY. Chen Special Issue Paper Pages: 1184 - 1188
Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy M. L. WarddripM. J. KappersR. F. Hicks Special Issue Paper Pages: 1189 - 1193
Self-limiting OMCVD growth of GaAs on V-grooved substrates with application to InGaAs/GaAs quantum wires Giorgio BiasiolFrank ReinhardtEli Kapon Special Issue Paper Pages: 1194 - 1198
Growth of direct bandgap GalnP quantum dots on GaP substrates Jong-Won LeeAlfred T. SchremerJoseph M. Ballantyne Special Issue Paper Pages: 1199 - 1204
Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001) H. MarchandP. DesjardinsR. A. Masut Special Issue Paper Pages: 1205 - 1213
Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate Toshio NishidaNaoki Kobayashi Special Issue Paper Pages: 1214 - 1220
MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters M. HeukenC. V. Eichel-StreiberH. Lakner Special Issue Paper Pages: 1221 - 1224
The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters R. M. BiefeldA. A. AllermanJ. H. Burkhart Special Issue Paper Pages: 1225 - 1230
OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers C. A. WangH. K. Choi Special Issue Paper Pages: 1231 - 1236
Growth of tin-doped indium antimonide for magnetoresistors D. L. PartinL. GreenC. M. Thrush Special Issue Paper Pages: 1237 - 1243
Effects of group V precursor and step structure on ordering in GaInP S. H. LeeYu HsuG. B. Stringfellow Special Issue Paper Pages: 1244 - 1249
Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio Y. S. ChunY. HsuT. -Y. Seong Special Issue Paper Pages: 1250 - 1255
MOVPE of ZnMgSSe heterostructures for optically pumped blue-green lasers H. KalischH. HamadehM. Heuken Special Issue Paper Pages: 1256 - 1260
The morphology of CdTe deposited by organometallic vapor phase epitaxy: The effect of substrate misorientation K. YongP. J. SidesA. J. Gellman Special Issue Paper Pages: 1261 - 1264