1. Foreword

   • D. Kurt Gaskill
   • Stephen D. Hersee

   EditorialNotes Pages: 1517 - 1517

2. The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire

   • S. D. Hersee
   • J. Ramer
   • M. Goorsky

   OriginalPaper Pages: 1519 - 1523

3. The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport properties

   • D. K. Gaskill
   • A. E. Wickenden
   • L. B. Rowland

   OriginalPaper Pages: 1525 - 1530

4. Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers

   • R. Niebuhr
   • K. Bachem
   • U. Kaufmann

   OriginalPaper Pages: 1531 - 1534

5. On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP

   • H. Roehle
   • H. Schroeter-Janssen
   • D. Franke

   OriginalPaper Pages: 1535 - 1537

6. Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

   • J. W. Huang
   • J. M. Ryan
   • T. F. Kuech

   OriginalPaper Pages: 1539 - 1546

7. Doping of gallium nitride using disilane

   • A. E. Wickenden
   • L. B. Rowland
   • P. H. Chi

   OriginalPaper Pages: 1547 - 1550

8. A novel pseudomorphic (GaAs_1−xSb_x-In_yGa_1−yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics

   • M. Peter
   • J. Forker
   • J. Wagner

   OriginalPaper Pages: 1551 - 1555

9. ZnMgSSe/ZnSSe/ZnSe-heterostructures grown by metalorganic vapor phase epitaxy

   • J. Söllner
   • J. Schmoranzer
   • M. Heuken

   OriginalPaper Pages: 1557 - 1561

10. InSb, GaSb, and GaInSb grown using trisdimethylaminoantimony

    • J. Shin
    • Y. Hsu
    • R. W. Gedridge

    OriginalPaper Pages: 1563 - 1569

11. Real-time optical monitoring of epitaxial growth: Pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si

    • N. Dietz
    • U. Rossow
    • K. J. Bachmann

    OriginalPaper Pages: 1571 - 1576

12. Effect of temperature on InGaAsP alloy composition

    • R. M. Lum
    • M. L. Mc Donald
    • J. Levkoff

    OriginalPaper Pages: 1577 - 1581

13. Characterization of very high purity InAs grown using trimethylindium and tertiarybutylarsine

    • S. P. Watkins
    • C. A. Tran
    • M. L. W. Thewalt

    OriginalPaper Pages: 1583 - 1590

14. Step structure during organometallic vapor phase epitaxial growth of ordered GaInP

    • G. B. Stringfellow
    • L. C. Su
    • J. T. Thornton

    OriginalPaper Pages: 1591 - 1595

15. Atomic layer epitaxy of InAs using tertiarybutylarsine

    • C. A. Tran
    • R. Ares
    • Y. Lacroix

    OriginalPaper Pages: 1597 - 1603

16. Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs(100) surfaces

    • C. M. Reaves
    • V. Bressler-Hill
    • S. P. Denbaars

    OriginalPaper Pages: 1605 - 1609

17. Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy

    • K. L. Whittingham
    • D. T. Emerson
    • D. G. Ast

    OriginalPaper Pages: 1611 - 1615

18. The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substrates

    • N. Carr
    • J. Thompson
    • P. M. Charles

    OriginalPaper Pages: 1617 - 1620

19. Semi-insulating selective regrowth of surface light emitting diodes

    • Ching-Long Jiang
    • Mark Mashas
    • William Reysen

    OriginalPaper Pages: 1621 - 1624

20. Maskless selective area growth of InP on Sub-μm V-groove patterned Si(001)

    • R. F. Schnabel
    • A. Krost
    • H. Cerva

    OriginalPaper Pages: 1625 - 1629

21. Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor deposition

    • A. M. Jones
    • M. L. Osowski
    • J. J. Coleman

    OriginalPaper Pages: 1631 - 1636

22. Investigation of the wafer temperature uniformity in an omvpe vertical rotating disk reactor

    • A. I. Gurary
    • A. G. Thompson
    • N. E. Schumaker

    OriginalPaper Pages: 1637 - 1640

23. Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

    • K. A. Jones
    • R. T. Lareau
    • D. C. Look

    OriginalPaper Pages: 1641 - 1648

24. Thermodynamic modeling of As and P incorporation In Ga_xIn_1−xP_yAs_1−y epitaxial layers grown by organometallic vapor phase epitaxy

    • A. S. Jordan

    OriginalPaper Pages: 1649 - 1654

25. Metalorganic vapor phase epitaxial growth of GaInAsP/GaAs

    • A. Knauer
    • G. Erbert
    • M. Weyers

    OriginalPaper Pages: 1655 - 1658

26. Evaluation and optimization of large area III-V epitaxial thickness uniformity using a Fabry-Perot microcavity test structure

    • Qing S Paduano
    • David Weyburne
    • R. Bhat

    OriginalPaper Pages: 1659 - 1665

27. Growth of Ga_xIn_1−xAs_1−ySb_y alloys by metalorganic chemical vapor deposition

    • Li Shuwei
    • Jin Yixin
    • Yuan Guang

    OriginalPaper Pages: 1667 - 1670

28. Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

    • W. Taudt
    • B. Wachtendorf
    • M. Heuken

    OriginalPaper Pages: 1671 - 1675

29. Effect of Se-doping on deep impurities in Al_xGa_1−xAs grown by metalorganic chemical vapor deposition

    • J. C. Chen
    • Z. C. Huang
    • Kun-Jing Lee

    OriginalPaper Pages: 1677 - 1682

30. Effect of Bragg reflector on the threshold current density in AlGaInP visible laser

    • M. S. Oh
    • N. H. Kim
    • T. I. Kim

    OriginalPaper Pages: 1683 - 1686

31. Oxygen incorporation, photoluminescence, and laser performance of AlGaAs grown by organometallic vapor phase epitaxy

    • B. D. Schwartz
    • R. S. Setzko
    • J. J. Powers

    OriginalPaper Pages: 1687 - 1690

32. Growth of high-quality GaSb by metalorganic vapor phase epitaxy

    • T. Koljonen
    • M. Sopanen
    • T. Tuomi

    OriginalPaper Pages: 1691 - 1696

33. The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy

    • Jeong Soo Kim
    • Seung Won Lee
    • Hyung Moo Park

    OriginalPaper Pages: 1697 - 1701

34. Monitoring of MOCVD reactants by UV absorption

    • K. C. Baucom
    • K. P. Killeen
    • H. K. Moffat

    OriginalPaper Pages: 1703 - 1706

35. Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

    • B. P. Keller
    • S. Keller
    • S. P. Denbaars

    OriginalPaper Pages: 1707 - 1709

36. A new buffer layer for MOCVD growth of GaN on sapphire

    • X. Li
    • D. V. Forbes
    • J. J. Coleman

    OriginalPaper Pages: 1711 - 1714

37. Large scale production of indium antimonide film for position sensors in automobile engines

    • Egbert Woelk
    • Holger Jürgensen
    • Tim Zielinski

    OriginalPaper Pages: 1715 - 1718

38. Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide

    • E. Richter
    • P. Kurpas
    • M. Weyers

    OriginalPaper Pages: 1719 - 1722

39. The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures

    • C. Pelosi
    • G. Attolini
    • F. Romanato

    OriginalPaper Pages: 1723 - 1730

40. Evidence for reductive elimination of H₂ in the decomposition of primary arsines

    • Douglas F. Foster
    • Christopher Glidewell
    • David J. Cole-Hamilton

    OriginalPaper Pages: 1731 - 1738

41. Microstructural study of the effect of an excess of Y₂BaCuO₅ and BaSnO₃ doping on the texturing process of YBa₂Cu₃O_7−x bulk superconductors

    • M. P. Delamare
    • I. Monot
    • G. Desgardin

    OriginalPaper Pages: 1739 - 1745

42. Defect structures in silicon merged epitaxial lateral overgrowth

    • Srikanth B. Samavedam
    • Eric P. Kvam
    • Gerold W. Neudeck

    OriginalPaper Pages: 1747 - 1751

43. Characterization of low range GaAs

    • Bijan Tadayon
    • Mark E. Twigg
    • D. Scott Katzer

    OriginalPaper Pages: 1753 - 1758

44. Minority carrier lifetime in doped and undoped epitaxially grown n-type Cd_xHg_1−xTe

    • S. Barton
    • D. Dutton
    • N. Metcalfe

    OriginalPaper Pages: 1759 - 1764

45. EMPMD Edition

    Division News Pages: A1 - A2