Abstract
Hall mobilities as high as 702 and 1230 cm2/Vs at 300 and 160K along with low dislocation densities of 4.0 × 108 cm-2 have been achieved in GaN films grown on sapphire by metalorganic chemical vapor deposition. High growth temperatures have been established to be crucial for optimal GaN film quality. Photoluminescence measurements revealed a low intensity of the deep defect band around 550 nm in films grown under optimized conditions.
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Keller, B.P., Keller, S., Kapolnek, D. et al. Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN. J. Electron. Mater. 24, 1707–1709 (1995). https://doi.org/10.1007/BF02676837
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DOI: https://doi.org/10.1007/BF02676837