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Effect of Bragg reflector on the threshold current density in AlGaInP visible laser

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Abstract

The GalnP/AlGalnP layers are known as attractive materials for 600 nm band laser diodes. In this paper, a Bragg reflector between GaAs substrate and n-cladding layer was applied for the reduction in the lasing threshold. In a SCH-MQW structure, a Bragg reflector was composed of alternating λ/4n layers of AlAs and AlGaAs layers, 12.5 pairs. The effect of Bragg reflector on the threshold current and spontaneous emission intensity was appreciable because most of spontaneously emitted photons were reflected from a Bragg reflector and carriers were regenerated in the GalnP active layer.

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Authors and Affiliations

  1. Materials & Devices Research Center, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea

    M. S. Oh, N. H. Kim, C. H. Lee, H. S. Park, J. Y. Kim, G. Pak & T. I. Kim

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  1. M. S. Oh
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  2. N. H. Kim
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  3. C. H. Lee
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  4. H. S. Park
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  5. J. Y. Kim
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  6. G. Pak
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  7. T. I. Kim
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Oh, M.S., Kim, N.H., Lee, C.H. et al. Effect of Bragg reflector on the threshold current density in AlGaInP visible laser. J. Electron. Mater. 24, 1683–1686 (1995). https://doi.org/10.1007/BF02676832

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  • DOI: https://doi.org/10.1007/BF02676832

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