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ZnMgSSe/ZnSSe/ZnSe-heterostructures grown by metalorganic vapor phase epitaxy

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Abstract

ZnMgSSe heterostructures have been grown in a low-pressure metalorganic vapor phase epitaxy system with the precursors dimethylzinc triethylamine, ditertiarybutylselenide, tertiarybutylthiol, and biscyclopentadienylmagnesium at 330°C and a total pressure of 400 hPa. The optimization of the single layers was carried out by means of low temperature photoluminescence. Only the near band edge emission was observable with negligible deep levels. The heterostructures consisting of a triple ZnSe quantum well showed intense luminescence which hints at an effective carrier confinement. Scanning transmission electron microscopy investigations of the heterostructures still showed structural detects since the layers were not lattice matched to the GaAs substrate yet.

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Authors and Affiliations

  1. Institut für Halbleitertechnik, RWTH Aachen, Templergraben 55, 52056, Aachen, Germany

    J. Söllner, J. Schmoranzer, H. Hamadeh, B. Bollig, E. Kubalek & M. Heuken

  2. Werkstoffe der Elektrotechnik, Gerhard Mercator Universität, 47048, Duisburg, Germany

    B. Bollig & E. Kubalek

Authors
  1. J. Söllner
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  2. J. Schmoranzer
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  3. H. Hamadeh
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  4. B. Bollig
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  5. E. Kubalek
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  6. M. Heuken
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Söllner, J., Schmoranzer, J., Hamadeh, H. et al. ZnMgSSe/ZnSSe/ZnSe-heterostructures grown by metalorganic vapor phase epitaxy. J. Electron. Mater. 24, 1557–1561 (1995). https://doi.org/10.1007/BF02676811

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  • DOI: https://doi.org/10.1007/BF02676811

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