The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire S. D. HerseeJ. RamerM. Goorsky OriginalPaper Pages: 1519 - 1523
The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport properties D. K. GaskillA. E. WickendenL. B. Rowland OriginalPaper Pages: 1525 - 1530
Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers R. NiebuhrK. BachemU. Kaufmann OriginalPaper Pages: 1531 - 1534
On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP H. RoehleH. Schroeter-JanssenD. Franke OriginalPaper Pages: 1535 - 1537
Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy J. W. HuangJ. M. RyanT. F. Kuech OriginalPaper Pages: 1539 - 1546
Doping of gallium nitride using disilane A. E. WickendenL. B. RowlandP. H. Chi OriginalPaper Pages: 1547 - 1550
A novel pseudomorphic (GaAs1−xSbx-InyGa1−yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics M. PeterJ. ForkerJ. Wagner OriginalPaper Pages: 1551 - 1555
ZnMgSSe/ZnSSe/ZnSe-heterostructures grown by metalorganic vapor phase epitaxy J. SöllnerJ. SchmoranzerM. Heuken OriginalPaper Pages: 1557 - 1561
InSb, GaSb, and GaInSb grown using trisdimethylaminoantimony J. ShinY. HsuR. W. Gedridge OriginalPaper Pages: 1563 - 1569
Real-time optical monitoring of epitaxial growth: Pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si N. DietzU. RossowK. J. Bachmann OriginalPaper Pages: 1571 - 1576
Effect of temperature on InGaAsP alloy composition R. M. LumM. L. Mc DonaldJ. Levkoff OriginalPaper Pages: 1577 - 1581
Characterization of very high purity InAs grown using trimethylindium and tertiarybutylarsine S. P. WatkinsC. A. TranM. L. W. Thewalt OriginalPaper Pages: 1583 - 1590
Step structure during organometallic vapor phase epitaxial growth of ordered GaInP G. B. StringfellowL. C. SuJ. T. Thornton OriginalPaper Pages: 1591 - 1595
Atomic layer epitaxy of InAs using tertiarybutylarsine C. A. TranR. AresY. Lacroix OriginalPaper Pages: 1597 - 1603
Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs(100) surfaces C. M. ReavesV. Bressler-HillS. P. Denbaars OriginalPaper Pages: 1605 - 1609
Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy K. L. WhittinghamD. T. EmersonD. G. Ast OriginalPaper Pages: 1611 - 1615
The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substrates N. CarrJ. ThompsonP. M. Charles OriginalPaper Pages: 1617 - 1620
Semi-insulating selective regrowth of surface light emitting diodes Ching-Long JiangMark MashasWilliam Reysen OriginalPaper Pages: 1621 - 1624
Maskless selective area growth of InP on Sub-μm V-groove patterned Si(001) R. F. SchnabelA. KrostH. Cerva OriginalPaper Pages: 1625 - 1629
Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor deposition A. M. JonesM. L. OsowskiJ. J. Coleman OriginalPaper Pages: 1631 - 1636
Investigation of the wafer temperature uniformity in an omvpe vertical rotating disk reactor A. I. GuraryA. G. ThompsonN. E. Schumaker OriginalPaper Pages: 1637 - 1640
Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures K. A. JonesR. T. LareauD. C. Look OriginalPaper Pages: 1641 - 1648
Thermodynamic modeling of As and P incorporation In GaxIn1−xPyAs1−y epitaxial layers grown by organometallic vapor phase epitaxy A. S. Jordan OriginalPaper Pages: 1649 - 1654
Metalorganic vapor phase epitaxial growth of GaInAsP/GaAs A. KnauerG. ErbertM. Weyers OriginalPaper Pages: 1655 - 1658
Evaluation and optimization of large area III-V epitaxial thickness uniformity using a Fabry-Perot microcavity test structure Qing S PaduanoDavid WeyburneR. Bhat OriginalPaper Pages: 1659 - 1665
Growth of GaxIn1−xAs1−ySby alloys by metalorganic chemical vapor deposition Li ShuweiJin YixinYuan Guang OriginalPaper Pages: 1667 - 1670
Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system W. TaudtB. WachtendorfM. Heuken OriginalPaper Pages: 1671 - 1675
Effect of Se-doping on deep impurities in AlxGa1−xAs grown by metalorganic chemical vapor deposition J. C. ChenZ. C. HuangKun-Jing Lee OriginalPaper Pages: 1677 - 1682
Effect of Bragg reflector on the threshold current density in AlGaInP visible laser M. S. OhN. H. KimT. I. Kim OriginalPaper Pages: 1683 - 1686
Oxygen incorporation, photoluminescence, and laser performance of AlGaAs grown by organometallic vapor phase epitaxy B. D. SchwartzR. S. SetzkoJ. J. Powers OriginalPaper Pages: 1687 - 1690
Growth of high-quality GaSb by metalorganic vapor phase epitaxy T. KoljonenM. SopanenT. Tuomi OriginalPaper Pages: 1691 - 1696
The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy Jeong Soo KimSeung Won LeeHyung Moo Park OriginalPaper Pages: 1697 - 1701
Monitoring of MOCVD reactants by UV absorption K. C. BaucomK. P. KilleenH. K. Moffat OriginalPaper Pages: 1703 - 1706
Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN B. P. KellerS. KellerS. P. Denbaars OriginalPaper Pages: 1707 - 1709
A new buffer layer for MOCVD growth of GaN on sapphire X. LiD. V. ForbesJ. J. Coleman OriginalPaper Pages: 1711 - 1714
Large scale production of indium antimonide film for position sensors in automobile engines Egbert WoelkHolger JürgensenTim Zielinski OriginalPaper Pages: 1715 - 1718
Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide E. RichterP. KurpasM. Weyers OriginalPaper Pages: 1719 - 1722
The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures C. PelosiG. AttoliniF. Romanato OriginalPaper Pages: 1723 - 1730
Evidence for reductive elimination of H2 in the decomposition of primary arsines Douglas F. FosterChristopher GlidewellDavid J. Cole-Hamilton OriginalPaper Pages: 1731 - 1738
Microstructural study of the effect of an excess of Y2BaCuO5 and BaSnO3 doping on the texturing process of YBa2Cu3O7−x bulk superconductors M. P. DelamareI. MonotG. Desgardin OriginalPaper Pages: 1739 - 1745
Defect structures in silicon merged epitaxial lateral overgrowth Srikanth B. SamavedamEric P. KvamGerold W. Neudeck OriginalPaper Pages: 1747 - 1751
Characterization of low range GaAs Bijan TadayonMark E. TwiggD. Scott Katzer OriginalPaper Pages: 1753 - 1758
Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1−xTe S. BartonD. DuttonN. Metcalfe OriginalPaper Pages: 1759 - 1764