1. Foreword

   • Robert L. Gunshor
   • Hiroshi Kukimoto
   • Ralph P. Ruth

   Specical Issue Paper Pages: 429 - 429

2. Electrical and optical characterization of p-type ZNSe for diode laser structures

   • J. Simpson
   • S. Y. Wang
   • B. C. Cavenett

   Specical Issue Paper Pages: 431 - 435

3. Atomic layer epitaxy of nitrogen-doped ZnSe

   • Yasushi Takemura
   • Makoto Konagai
   • Kiyoshi Takahashi

   Specical Issue Paper Pages: 437 - 440

4. MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

   • D. C. Grillo
   • W. Xie
   • A. V. Nurmikko

   Specical Issue Paper Pages: 441 - 444

5. Ultraviolet semiconductor laser structures with pseudomorphic ZnCdSSe quaternary alloys on GaP substrates

   • K. Ichino
   • K. Iwami
   • S. G. Fujita

   Specical Issue Paper Pages: 445 - 452

6. Structural properties of nitrogen-doped ZnSe epitaxial layers grown by MBE

   • J. Petruzzello
   • J. Gaines
   • C. Ponzoni

   Specical Issue Paper Pages: 453 - 456

7. Elemental vapor transport epitaxy of II-VI semiconductors

   • A. Gurary
   • G. S. Tompa
   • W. E. Mayo

   Specical Issue Paper Pages: 457 - 461

8. Selective doping of N-type ZnSe layers with chlorine grown by molecular beam epitaxy

   • Ziqiang Zhu
   • Takafumi Yao
   • Hiroshi Mori

   Specical Issue Paper Pages: 463 - 466

9. Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

   • H. Luo
   • N. Samarth
   • J. R. Buschert

   Specical Issue Paper Pages: 467 - 471

10. Elimination of surface site blockage due to ethyl species in MOMBE of ZnSe

    • E. Ho
    • C. A. Coronado
    • L. A. Kolodziejski

    Specical Issue Paper Pages: 473 - 478

11. Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

    • R. D. Feldman
    • T. D. Harris
    • A. M. Johnson

    Specical Issue Paper Pages: 479 - 484

12. Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

    • J. Han
    • T. S. Stavrinides
    • A. V. Nurmikko

    Specical Issue Paper Pages: 485 - 488

13. Long hole spin relaxation times in diluted magnetic semiconductor heterostructures

    • B. T. Jonker
    • L. P. Fu
    • J. Warnock

    Specical Issue Paper Pages: 489 - 495

14. Atomic layer epitaxy of CdTe-ZnTe and CdTe-MnTe Superlattices

    • W. Faschinger
    • F. Hauzenberger
    • H. Sitter

    Specical Issue Paper Pages: 497 - 500

15. Low temperature growth and characterization of ZnSe films grown on GaAs

    • H. Stanzl
    • K. Wolf
    • W. Gebhardt

    Specical Issue Paper Pages: 501 - 503

16. Characterization of vapor phase epitaxial ZnSe films

    • T. Muranoi
    • M. Hirose
    • K. Ohno

    Specical Issue Paper Pages: 505 - 507

17. Low pressure OMVPE of ZnSe with hydrogen selenide and dimethylzinc-triethylamine

    • Jeung-Soo Huh
    • Sanjay Patnaik
    • Klavs F. Jensen

    Specical Issue Paper Pages: 509 - 514

18. Methods for reducing deep level emissions from ZnSe grown by organometallic vapor phase epitaxy

    • Salman Akram
    • Ishwara Bhat

    Specical Issue Paper Pages: 515 - 519

19. Composition control by photo-irradiation in MOVPE of ZnCdSe and ZnCdS alloy layers and multi-layered structures

    • Shizuo Fujita
    • Satoshi Matsumoto
    • Shigeo Fujita

    Specical Issue Paper Pages: 521 - 527

20. Excitonic properties of Zn_1−xCd_xSe/ZnSe quantum well structures grown by metalorganic vapor phase epitaxy

    • A. Ohki
    • K. Ando
    • S. Zembutsu

    Specical Issue Paper Pages: 529 - 535

21. Low pressure MOVPE growth of ZnSe, ZnTe, and ZnSe/ZnTe strained-layer superlattices

    • N. Briot
    • T. Cloitre
    • A. Huber

    Specical Issue Paper Pages: 537 - 543

22. Preparation of CdSSe-ZnS superlattice, SrS, and CdSSe-SrS superlattice by hot-wall epitaxy, and applications to electroluminescent devices

    • H. Fujiyasu
    • Y. Takeuchi
    • A. Ishida

    Specical Issue Paper Pages: 545 - 550

23. Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, as-deposited polycrystalline Si-on-single crystal Si diodes

    • Shubneesh Batra
    • Nanseng Jeng
    • Chuck Dennison

    Regular Issue Paper Pages: 551 - 554

24. Highly doped galnAs using diethylberyllium by MOCVD for InP-based heterostructure bipolar transistor applications

    • B. T. McDermott
    • C. W. Seabury
    • J. A. Higgins

    Regular Issue Paper Pages: 555 - 558

25. MeV energy sulfur implantation in GaAs and InP

    • Jayadev Vellanki
    • Ravi K. Nadella
    • Peter H. Chi

    Regular Issue Paper Pages: 559 - 566

26. A study of the evolution process of antiphase boundaries in GaAs on Si

    • S. I. Molina
    • G. Aragón
    • F. Briones

    Regular Issue Paper Pages: 567 - 572

27. Examination of natural convection plumes from partially heated PCB plates and estimation of the heat transfer coefficients

    • F. Sarvar
    • P. A. Witting
    • N. J. Poole

    Regular Issue Paper Pages: 573 - 577