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MeV energy sulfur implantation in GaAs and InP

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Abstract

Room temperature and elevated temperature sulfur implants were performed into semi-insulating GaAs and InP at variable energies and fluences. The implantations were performed in the energy range 1–16 MeV. Range statistics of sulfur in InP and GaAs were calculated from the secondary ion mass spectrometry atomic concentration depth profiles and were compared with TRIM92 values. Slight in-diffusion of sulfur was observed in both InP and GaAs at higher annealing temperatures for room temperature implants. Little or no redistribution of sulfur was observed for elevated temperature implants. Elevated temperature implants showed higher activations and higher mobilities compared to room temperature implants in both GaAs and InP after annealing. Higher peak electron concentrations were observed in sulfur-implanted InP (n ≈ 1 × 1019 cm−3) compared to GaAs (n ≈ 2 × 1018 cm−3). The doping profile for a buried n+ layer (n ≈ 3.5 × 1018 cm−3) of a positive-intrinsic-negative diode in GaAs was produced by using Si/S coimplantation.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, VA

    Jayadev Vellanki, Ravi K. Nadella & Mulpuri V. Rao

  2. Naval Research Laboratory, 20375, Washington DC

    Harry B. Dietrich

  3. National Institute of Standards and Technology, 20899, Gaithersburg, MD

    David S. Simons & Peter H. Chi

Authors
  1. Jayadev Vellanki
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  2. Ravi K. Nadella
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  3. Mulpuri V. Rao
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  4. Harry B. Dietrich
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  5. David S. Simons
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  6. Peter H. Chi
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Vellanki, J., Nadella, R.K., Rao, M.V. et al. MeV energy sulfur implantation in GaAs and InP. J. Electron. Mater. 22, 559–566 (1993). https://doi.org/10.1007/BF02661631

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