Abstract
CdSSe (manganese-doped, Eg = 1.9–2.5 eV, lattice constant a = 6.05–5.8A)-ZnS (Eg = 3.56 eV, a = 5.41A) superlattices, SrS (cerium-doped, E = 4.4 eV, a = 6.02A) layers, and CdSSe-SrS (cerium-doped) superlattice layers nave been prepared by hot-wall epitaxy, and the properties and the electroluminescent device characteristics of the active layers are reported. For the superlattices with ZnS, the maximum luminance was 800 cd/m2 at an applied sinusoidal voltage (Vo-p = 200 V) with frequency 1kHz, and the wavelength of the spectral peak was 610 nm due to the large strain caused by the lattice mismatch (8–15%) between the CdSSe and ZnS layers. The maximum luminance and Comisson Internationale de Enluminure (CIE) chromaticity of CdS(Mn)-ZnS superlattices and CdSe(Mn)-ZnS superlattice devices were 557cd/m2 and (x,y) = (0.58,0.41) and 982 cd/m2 and (0.61, 0.38), respectively. For superlattices with SrS, the maximum luminance of the device with the SrS (cerium-doped) active layer was nearly 700 cd/m2 at a voltage of 340V. Blue electroluminescent emission was observed in the photon wavelength region less than 450 nm, due to carriers dropping into the quantum wells of the device with the CdSSe-SrS superlattice active layer.
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References
T. Inoguchi, M. Takeda, Y. Kakihata, Y. nakata and M. Yoshida, in’74 SID Int. Symp. Digest, 1974, p. 84.
H. Kobayashi, S. Tanaka, V. Shanker, S. Shiiki and H. Deguchi,J. Cryst. Growth 72, 559 (1985).
H. Fujiyasu, M. Katayama, H. Yang, K. Ishino and A. Ishida,Electroluminescence, eds. S. Shionoya and H. Kobayashi (Springer-Verlag, Berlin 1989), p. 218.
H. Fujiyasu, Y. Takeuchi, K. Hikida, K. Ishino and A. Ishida,J. Cryst. Growth 117, 1062 (1992).
Y. Takeuchi, Y. Okuno, T. Nakamura, K. Ishino, A. Ishida and H. Fujiyasu,Jpn. J. Appl. Phys. 31, 1391 (1992).
H. Fujiyasu, A. Ishida, H. Kuwabara, S. Shimomura, S. Takaoka and K. Murase,Surface Sci. 142, 579 (1984).
Y. Takeuchi, K. Hikida, T. nakamura, K. Ishino, A. Ishida and H. Fujiyasu, submitted for publication.
H. Fujiyasu, T. Sasaya, M. Katayama, H. Yang, K. Ishino and A. Ishida,Appl. Surface Sci. 33/34, 845 (1988).
R. Tornqvist,J. Cryst. Growth 59, 395 (1982).
N.E. Rigby and J.W. Allen,J. hum. 42, 143 (1988).
N.V. Vlasenko, S.A. Zunio and Y.V. Kopytyo,Phys. Status Solidi (a) 29, 671(1975).
P.J. Wright, B. Cockayne, A.F. Cattell, P.J. Dean and A.D. Pitt,J. Cryst. Growth 59, 155 (1982).
R. Mach, J.V. Kalben, W. Gericke, G.O. Muller and G.U. Reisperger,Phys. Status Solidi (a) 65, 489 (1983).
T.Kiichi, Y. Takeuchi, K. Hikida, A. Ishida and H. Fujiyasu, to be submitted for publication.
S. Tanaka, H. Yoshiyama, J. Nishiura, S. Ohshio, H. Kawakami and H. Kobayashi,Appl. Phys. Lett. 51, 1661 (1987).
H. Yoshiyama, S.H. Sohn, S. Tanaka, H. Kobayashi, inElectroluminescence, eds. S. Shionoya and H. Kobayashi (Springer-Verlag, Berlin 1989), p. 48.
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Fujiyasu, H., Takeuchi, Y., Hikida, K. et al. Preparation of CdSSe-ZnS superlattice, SrS, and CdSSe-SrS superlattice by hot-wall epitaxy, and applications to electroluminescent devices. J. Electron. Mater. 22, 545–550 (1993). https://doi.org/10.1007/BF02661628
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DOI: https://doi.org/10.1007/BF02661628