Abstract
The metalorganic molecular beam epitaxial growth of ZnSe using diethylzinc and/or diethylselenium gas sources results in an abnormally low growth rate of several hundred angstroms per hour. Experiments with dimethylzinc or elemental zinc with elemental selenium confirm that adsorbed ethyl-based radicals contribute to the low growth rate. Surface sites for incorporation of the metal atom are saturated by the chemisorbed ethyl radicals or by an ethyl molecule that is postulated to cause the growth rate limitation. It is observed that laser and electron beam irradiation overcome the site blockage phenomenon under appropriate growth conditions. For beam-assisted growth, significant increases over the unilluminated growth rate are measured. Experiments designed to investigate the wavelength dependence of the photon-enhanced growth rate provide evidence that photo-generated electron/hole pairs are necessary to assist in releasing the ethyl radical from the unpyrolyzed DEZn molecule that is adsorbed to the surface.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
W. Xie, D.C. Grillo, M. Kobayashi, R.L. Gunshor, H. Jeon, J. Ding, A.V. Nurmikko, G.C. Hua and N. Otsuka, paper presented at the VII Int. Conf. on MBE, Schwäbisch Gmünd, Germany, August 24–29,1992 (to appear inJ. Cryst. Growth).
L.A. Kolodziejski, R.L. Gunshor, Q. Fu, D. Lee, A.V. Nurmikko, J.M. Gonsalves and N. Otsuka,Appl. Phys. Lett. 52, 1080 (1988).
H. Ando, A. Taike, M. Konagai and K. Takahashi,Jpn. J. Appl. Phys. 25, L279 (1986).
H. Ando, A. Taike, R. Kimura, M. Konagai and K. Takahashi,J. Appl. Phys. 62, 1251 (1987).
N. Kobayashi, Y. Shinoda and Y. Kobayashi,Jpn. J. Appl. Phys. 27, L1728 (1988).
H. Oniyama, S. Yamaga and A. Yoshikawa,Jpn. J. Appl. Phys. 28, L2137(1989).
Y. Kawakami, T. Toyoda, Y. Wu, Sz. Fujita and Sg. Fujita,Jpn. J. Appl. Phys. 29, 2440 (1990).
A. Taike, M. Migita and H. Yamamoto,Appl. Phys. Lett. 56, 1989(1990).
C.A. Coronado, E. Ho, L.A. Kolodziejski and C.A. Huber,Proc. Mater. Res. Soc. Sym, San Francisco, April 1992.
C.A. Coronado, E. Ho, L.A. Kolodziejski and C. A. Huber,Appl. Phys. Lett. 61, 534 (1992).
J.E. Cunningham, AT&T Bell Laboratories (private communication).
A.J. Murrell, A.T.S. Wee, D.H. Fairbrother, N.K. Singh, J.S. Foord, G.J. Davies and D.A. Andrews,J. Appl. Phys. 68,4053 (1990).
A.J. Murrell, A.T.S. Wee, D.H. Fairbrother, N.K. Singh and J.S. Foord,J. Cryst. Growth 105, 199 (1990).
Sg. Fujita, A. Tanabe, T. Sakamoto, M. Isemura and Sz. Fujita.Jpn. J. Appl. Phys. 26, L2000 (1987).
T. Yasuda, Y. Koyama, J. Wakitani, J. Yoshino and H. Kukimoto,Jpn. J. Appl. Phys. 28, L1628 (1989).
A. Yoshikawa, T. Okamoto, T. Fujimoto, K. Onoue, S. Yamaga and H. Kasai,Jpn. J. Appl. Phys. 29, L225 (1990).
H. Hou, Z. Zhang, U. Ray and M. Vemon,J. Chem. Phys. 92, 1728 (1990).
Sz. Fujita, S. Maruo, H. Ishio, P. Murawala and Sg. Fujita,J. Cryst Growth 107, 644 (1991).
R.L. Gunshor, L.A. Kolodziejski, A.V. Nurmikko and N. Otsuka,Semiconductors and Semimetals, Vol. 33 (T. P. Pearsall, ed.) pp. 337–400 (1990).
J. Simpson, S.J.A. Adams, J.M. Wallace, K.A. Prior and B.C. Cavenett,Semicond. Sci. Technol. 7, 460 (1992).
N. Matsumura, T. Fukada and J. Saraie,J. Cryst Growth 101, 61 (1990).
C.A. Coronado, E. Ho and L.A. Kolodziejski, paper presented at the VII Int. Conf. on MBE, Schwäbisch Gmünd, Germany, August 24–29,1992 (to appear inJ. Cryst. Growth).
T. Takahashi, Y. Arakawa, M. Nishioka and T. Ikoma,Appl. Phys. Lett. 60, 68(1992).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ho, E., Coronado, C.A. & Kolodziejski, L.A. Elimination of surface site blockage due to ethyl species in MOMBE of ZnSe. J. Electron. Mater. 22, 473–478 (1993). https://doi.org/10.1007/BF02661616
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02661616