Abstract
In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm−3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R.M. Park, M.B. Troffer, CM. Rouleau, J.M. DePuydt and M.A. Haase,Appl. Phys. Lett. 57, 2127 (1990).
K. Ohkawa, T. Karasawa and T. Mitsuyu,Jpn. J. Appl. Phys. 30, L152 (1991).
W. Xie, D.C. Grillo, R.L. Gunshor, M. Kobayashi, G.C. Hua, N. Otsuka, H. Jeon, J. Ding and A.V. Nurmikko,Appl. Phys. Lett. 60, 463 (1992).
H. Jeon, J. Ding, A.V. Nurmikko, W. Xie, M. Kobayashi and R.L. Gunshor,Appl. Phys. Lett. 60, 892 (1992).
W. Xie, D.C. Grillo, R.L. Gunshor, M. Kobayashi, H. Jeon, J. Ding, A.V. Nurmikko, G. C. Hua and N. Otsuka,Appl. Phys. Lett. 60, 20 April 1992.
M. Haase, J. Qiu, J. DePuydt and H. Cheng,Appl. Phys. Lett. 59, 1272 (1991).
H. Jeon, J. Ding, W. Patterson, A.V. Nurmikko, W. Xie, D.C. Grillo, M. Kobayashi and R.L. Gunshor,Appl. Phys. Lett. 59, 3619 (1991).
H. Jeon, J. Ding, A.V. Nurmikko, W. Xie, D.C. Grillo, M. Kobayashi, R.L. Gunshor, G.C. Hua and N. Otsuka,Appl. Phys. Lett. 60, 27 April 1992.
F. Kitagawa, T. Mishima and K. Takahashi,J. Electrochem. Soc. 127, 937 (1981).
Y. Hishida, H. Ishii, T. Toda and T. Niina,J. Cryst. Growth 95, 517(1989).
D.L. Mathine, S.M. Durbin, R.L. Gunshor, M. Kobayashi, D.R. Menke, Z. Pei, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott and A.V. Nurmikko,Appl. Phys. Lett. 55, 268 (1989).
J.O. McCaldin and T.C. McGill,J. Vac. Sci. Technol. B 6,1360 (1988).
D.J. Chadi and K.J. Chang,Appl. Phys. Lett. 55, 575 (1989).
D.J. Chadi,Appl. Phys. Lett. 59, 3589 (1991).
J.D. Dow, R. Hong, S. Klemm, S.Y. Ren, M.-H. Tsai, O.F. Sankey and R.V. Kasowski,Phys. Rev. B 43, 4396 (1991).
W. Baltensperger,Phil. Mag. 44,1355 (1953).
L. Crowder and W.N. Hammer,Phys. Rev. 150, 541(1966).
F. El Akkad,Semicond. Sci. Technol. 2, 629 (1987).
We have studied the nitrogen doping of ZnTe by varying the growth temperature from 275 to 400°C while maintaining similar growth rate under stoichiometric growth conditions; our preliminary result indicated that the free hole concentration of the ZnTe:N epilayers is relatively iNSensitive (within the same order of magnitude) to the substrate temperature in this temperature range.
R.D. Feldman, R.F. Austin, P.M. Bridenbaugh, A.M. Johnson, W.M. Simpson, B.A. Wilson and C.E. Bonner,J. Appl. Phys. 64, 1191 (1988); also D.L. Mathine, PhD Thesis, Purdue University (1991).
S. Tiwari, S.L. Wright and A.L. Kleinsasser,IEEE Trans. Electron Devices ED–34, 185 (1987).
G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers and F.G. O’Hara,IEDM ’89 Techn. Digest, 307, (1989).
D.X. Xu, G.D. Shen, M. Willander and G.V. Hansson,Proc. High-Speed Electron. Device Scaling, SPE 1288, 200 (1990).
G.P. Schwartz, G.J. Gualtieri, R.D. Feldman, R.F. Austin and R.G. Nuzzo,J. Vac. Sci. Technol. B 8, 747 (1990).
E.T. Yu, E.T. Croke, D.H. Chow, D.A. Collins, M.C. Phillips, T.C. McGill, J.O. McCaldin and R.H. Miles,J. Vac. Sci. Technol. B 8, 908 (1990).
J. Qiu, Q.-D. Qian, R.L. Gunshor, M. Kobayashi, D.R. Menke, D. Li and N. Otsuka,Appl. Phys. Lett. 56, 1272 (1990).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Han, J., Stavrinides, T.S., Kobayashi, M. et al. Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes. J. Electron. Mater. 22, 485–488 (1993). https://doi.org/10.1007/BF02661618
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02661618