1. Foreword

   • David Kisker

   EditorialNotes Pages: 249 - 249

2. Effects of pressure and temperature on epitaxial growth of InP on non-planar substrates using OMVPE

   • Jeong-Soo Kim
   • Ji-Beom Yoo
   • Yong-Tak Lee

   OriginalPaper Pages: 251 - 256

3. Localized deposition of GaAs/GaInP heterostructures using LP-MOVPE

   • M. Maassen
   • O. Kayser
   • P. Balk

   OriginalPaper Pages: 257 - 264

4. Atomic layer epitaxy of InP

   • D. Bertone

   OriginalPaper Pages: 265 - 268

5. Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence

   • M. E. Sherwin
   • F. L. Terry
   • G. I. Haddad

   OriginalPaper Pages: 269 - 275

6. Low pressure and low temperature gallium arsenide homoepitaxy employing in-situ generated arsine

   • B. G. Pihlstrom
   • T. Y. Sheng
   • G. J. Collins

   OriginalPaper Pages: 277 - 279

7. Selective growth of GaAs and GaAlAs by Cl-assisted OMVPE at atmospheric pressure

   • R. Azoulay
   • L. Dugrand
   • A. M. Pougnet

   OriginalPaper Pages: 281 - 288

8. Multi-wafer growth of highly uniform InGaP/GaAs by low pressure MOVPE

   • M. A. McKee
   • T. McGivney
   • B. C. Rose

   OriginalPaper Pages: 289 - 292

9. Optical and structural properties of MOVPE grown Ga_xIn_1−xAs/InP strained multiple quantum well atructures

   • R. Meyer
   • Hilde Hardtdegen
   • B. Meyer

   OriginalPaper Pages: 293 - 298

10. OMVPE regrowth of CH₃I-vapor-etched GaAs

    • C. A. Wang
    • C. W. Krueger
    • R. A. Brown

    OriginalPaper Pages: 299 - 304

11. Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE

    • T. Kikkawa
    • H. Tanaka
    • J. Komeno

    OriginalPaper Pages: 305 - 315

12. Growth of Ga _x In_1−x As _y P_1−y using ethyldimethylindium andt-butylphophine

    • P. R. Sharps
    • J. B. Posthill
    • M. L. Timmons

    OriginalPaper Pages: 317 - 321

13. Dopant incorporation in GaAs and AlGaAs grown by MOMBE for high speed devices

    • C. R. Abernathy
    • F. Ren
    • J. Song

    OriginalPaper Pages: 323 - 327

14. Emission infrared spectroscopy for in situ analysis of the OMVPE growth surface

    • D. Mazzarese
    • K. A. Jones
    • W. C. Conner

    OriginalPaper Pages: 329 - 333

15. Growth and characterization of Al_xGa_1−xAs Bragg reflectors by LP-MOCVD

    • S. M. Vernon
    • S. P. Tobin
    • M. M. Al-Jassim

    OriginalPaper Pages: 335 - 340

16. Quantitative oxygen measurements in OMVPE Al _x Ga_1−x As grown by methyl precursors

    • T. F. Kuech
    • R. Potemski
    • G. Scilla

    OriginalPaper Pages: 341 - 346

17. GaAs/Ge heterojunction grown by metal-organic chemical vapor deposition and its application to high efficiency photovoltaic devices

    • J. C. Chen
    • M. Ladle Ristow
    • J. G. Werthen

    OriginalPaper Pages: 347 - 353

18. Growth mechanism of AlGaAs on terraced substrates by low pressure MOVPE

    • Yoshihiro Ueta
    • Naoki Wada
    • Yoshihiro Shintani

    OriginalPaper Pages: 355 - 359

19. Evaluation of Zn{N[Si(CH₃)₃]₂}₂ as ap-type dopant in OMVPE growth of ZnSe

    • W. S. Rees
    • D. M. Green
    • J. Kim

    OriginalPaper Pages: 361 - 366

20. Experimental investigation of N-MOS inversion layers in the electric quantum limit

    • A. Kalnitsky
    • A. R. Boothroyd
    • R. Beerkens

    OriginalPaper Pages: 367 - 372

21. A study of sputter deposited silicon films

    • Y. P. Xu
    • R. S. Huang
    • G. A. Rigby

    OriginalPaper Pages: 373 - 381

22. The growth and characterization of GaN on sapphire and silicon

    • Z. J. Yu
    • B. S. Sywe
    • J. H. Edgar

    OriginalPaper Pages: 383 - 387

23. Relationship between near bandedge absorption and photoluminescence efficiency in semi-insulating GaAs

    • S. Tüzemen
    • M. R. Brozel
    • L. Breivik

    OriginalPaper Pages: 389 - 394

24. Conference announcement

    Announcement Pages: A1 - A1