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Growth of Ga x In1−x As y P1−y using ethyldimethylindium andt-butylphophine

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Abstract

The growth of GaInAsP lattice matched to GaAs using tertiary-butylphosphine and ethyldimethylindium to replace the more conventional phosphine and trimethylindium is described. The quaternary compound lattice matched to GaAs has received far less attention than related compositions that lattice match InP. Using the new sources, most of the growth problems experienced by previous workers have been avoided. Uniform compositions have been grown reproducibly without evidence of gas-phase, adduct-forming reactions. Bothn- andp-type films have been grown. Heteroepitaxy of high quality GalnAsP layers on Ge has also been achieved, and microstructural results are presented.

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Authors and Affiliations

  1. Research Triangle Institute, 27709-2194, Research Triangle Park, North Carolina

    P. R. Sharps, J. B. Posthill & M. L. Timmons

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  1. P. R. Sharps
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  2. J. B. Posthill
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  3. M. L. Timmons
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Sharps, P.R., Posthill, J.B. & Timmons, M.L. Growth of Ga x In1−x As y P1−y using ethyldimethylindium andt-butylphophine. J. Electron. Mater. 21, 317–321 (1992). https://doi.org/10.1007/BF02660460

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  • DOI: https://doi.org/10.1007/BF02660460

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