1. Crack formation in metallized single crystal silicon substrates

   • T. O’brien
   • Y. Li
   • S. Danyluk

   OriginalPaper Pages: 859 - 863

2. Defects and strains at magnetic and semiconductor interfaces

   • W. W. Gerberich
   • L. G. Swanson
   • R. M. KING

   OriginalPaper Pages: 865 - 872

3. Investigation of the reversibility of deformation in silicon sheets

   • S. L. Hyland
   • C. Dubé
   • D. G. Ast

   OriginalPaper Pages: 873 - 879

4. The mechanical behavior of silicon during small-scale indentation

   • G. M. Pharr
   • W. C. Oliver
   • D. R. Clarke

   OriginalPaper Pages: 881 - 887

5. On the influence of light on dislocation motion in compound semiconductors

   • T. J. Garosshen
   • C. S. Kim
   • J. M. Galligan

   OriginalPaper Pages: 889 - 894

6. Thermomechanics of thin films and interfaces

   • John C. Lambropoulos

   OriginalPaper Pages: 895 - 901

7. Measuring stiffnesses and residual stresses of silicon nitride thin films

   • S. Hong
   • T. P. Weihs
   • W. D. Nix

   OriginalPaper Pages: 903 - 909

8. Electromigration and mechanical stress in aluminium conductor tracks passivated by anodisation

   • C. A. Ross
   • J. S. Drewery
   • J. E. Evetts

   OriginalPaper Pages: 911 - 918

9. Deformation and bonding processes in aluminum ultrasonic wire wedge bonding

   • James E. Krzanowski
   • Nikhil Murdeshwar

   OriginalPaper Pages: 919 - 928

10. The creep and strain rate sensitivity of a high Pb content solder with comparisons to 60Sn/40Pb solder

    • Harvey D. Solomon

    OriginalPaper Pages: 929 - 936

11. A real-time photoluminescence imaging system

    • G. Livescu
    • M. Angell
    • W. H. Knox

    OriginalPaper Pages: 937 - 942

12. Strain interactions between dislocation arrays in epitaxial Si _x Ge_1-x /Si heterostructures

    • B. J. Bartholomeusz
    • K. Rajan

    OriginalPaper Pages: 943 - 948

13. Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge _x Si_1-x grown on patterned Si substrates

    • E. A. Fitzgerald
    • Y. -H. Xie
    • B. E. Weir

    OriginalPaper Pages: 949 - 955

14. The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs

    • G. P. Watson
    • M. O. Thompson
    • J. Miller

    OriginalPaper Pages: 957 - 965

15. Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

    • Daniel C. Bertolet
    • Jung-Kuei Hsu
    • Kei May Lau

    OriginalPaper Pages: 967 - 974

16. Molecular beam epitaxial growth of gaas on gadolinium-gallium garnet

    • A. R. Calawa
    • M. J. Manfra

    OriginalPaper Pages: 975 - 979

17. An investigation on hydride VPE growth and properties of semi-insulating InP:Fe

    • Sebastian Lourdudoss
    • Bo Hammarlund
    • Olle Kjebon

    OriginalPaper Pages: 981 - 987

18. Molecular beam epitaxy and characterization of Al _x Ga_1-x As _y Sb_1-y (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates

    • J. A. Lott
    • L. R. Dawson
    • S. R. Kurtz

    OriginalPaper Pages: 989 - 993

19. Formation of aluminum oxide films from aluminum hexafluoroacetylacetonate at 350–450° c

    • D. Temple
    • A. Reisman

    OriginalPaper Pages: 995 - 1002

20. Degenerate cadmium oxide films for electronic devices

    • T. L. Chu
    • Shirley S. Chu

    OriginalPaper Pages: 1003 - 1005

21. Foreword

    EditorialNotes Pages: 1007 - 1007