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On the influence of light on dislocation motion in compound semiconductors

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Abstract

The influence of light on dislocation motion and the associated flow stress is examined for CdS and (Hg0.3Cd0.7)Te semiconductors. For CdS, a large increase in flow stress is observed for slip on the basal planes during irradiation. In contrast, (Hg0.3Cd0.7)Te exhibits a smaller photoplastic effect with a time delay. Results of experiments on the effect of light, slip direction, strain rate, and temperature are presented with emphasis on CdS. Possible mechanisms of photoplasticity, along with methods of exploiting the photoplastic effect to reduce dislocation densities in semiconductor devices, are also discussed.

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References

  1. Y. A. Osip’yan and J. B. Savchenko, JETP Lett.7, 100 (1968).

    Google Scholar 

  2. L. Carlsson and C. Svensson, J. Appl. Phys.41, 1652 (1970).

    Article  CAS  Google Scholar 

  3. R. Labusch and W. Schroter, inDislocations in Solids, ed. F. R. N. Nabarro, North-Holland Physics Publishing, Amsterdam, The Netherlands, p. 127, 1986.

    Google Scholar 

  4. P. B. Hirsch inDislocations and Properties of Real Materials, Proc. of the Fiftieth anniversary of the concept of dislocations in crystals, The Institute of Metals, London, p. 333, 1985.

    Google Scholar 

  5. Y. A. Osip’yan, V. F. Petrenko, A. V. Zaretski and R. W. Whitworth, Adv. Phys.35, 115 (1986).

    Article  CAS  Google Scholar 

  6. Y. A. Osip’yan and V. F. Petrenko, J. Phys. Coll. C6, Suppl.40, C6–161 (1979).

    Google Scholar 

  7. A. R. Hutson,Defects in Semiconductors, ed. L. C. Kimerling and J. M. Parsey Jr., TMS Publication, p. 367, 1984.

  8. S. Takeuchi, K. Maeda and K. Nakagawa, Mat. Res. Soc. Symp. Proc. Vol. 14, Elsevier Science Publishing Co., p. 461, 1983.

  9. K. H. Kusters and H. Alexander, Physica116B, 594 (1983).

    Google Scholar 

  10. B. E. Midivanyan and M. Shikhsaidov, Phys. Status Solidi(a) 107, 131 (1988).

    Article  Google Scholar 

  11. K. Maeda and S. Takeuchi, Jpn. J. Appl. Phys.20, L165 (1981).

    Article  CAS  Google Scholar 

  12. K. Sumino,Defects and Properties of Semiconductors: Defect Engineering, eds. J. Chikawa, K. Sumino and K. Wada, KTK Scientific Publishers, Tokyo, p. 3, 1987.

    Google Scholar 

  13. J. Pellegrino and J. M. Galligan, Phys. Status Solidi(a) 110, 565 (1988).

    Article  CAS  Google Scholar 

Download references

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Authors and Affiliations

  1. Department of Metallurgy and Institute of Materials Science, University of Connecticut, 06269-3136, Storrs, CT

    T. J. Garosshen, C. S. Kim & J. M. Galligan

Authors
  1. T. J. Garosshen
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  2. C. S. Kim
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  3. J. M. Galligan
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Garosshen, T.J., Kim, C.S. & Galligan, J.M. On the influence of light on dislocation motion in compound semiconductors. J. Electron. Mater. 19, 889–894 (1990). https://doi.org/10.1007/BF02652913

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  • DOI: https://doi.org/10.1007/BF02652913

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