1. Foreword

   EditorialNotes Pages: 601 - 601

2. Considerations for the development of radiation resistant devices and VLSI circuits

   • Nadim F. Haddad

   OriginalPaper Pages: 603 - 607

3. Comparison of the effects of ionizing radiation at twelve dose rates from 0.0015 to 100 rad(Si)/s

   • C. A. Goben
   • W. E. Price
   • J. R. Coss

   OriginalPaper Pages: 609 - 615

4. A comparison of the radiation tolerance of the STC bipolar, CMOS and merged bipolar/CMOS processes

   • C. J. Walker
   • D. E. Boyle
   • R. Ellis

   OriginalPaper Pages: 617 - 627

5. Radiation studies with accelerator generated fast neutrons

   • Gunter H. R. Kegel
   • Causon K. C. Jen

   OriginalPaper Pages: 629 - 632

6. Applications of electron paramagnetic resonance to studies of defects in insulators and semiconductors

   • L. G. Rowan

   OriginalPaper Pages: 633 - 636

7. A comparison of commercially available quasistatic meters and methods

   • Larry Sadwick

   OriginalPaper Pages: 637 - 650

8. A new electron-trapping model for the gate insulator of insulated gate field-effect transistors

   • C. T. Sune
   • A. Reisman
   • C. K. Williams

   OriginalPaper Pages: 651 - 655

9. Charge collection microscopy of annealing induced electrically active defects in Si_1−xGe_x/Si strained layer epitaxy

   • P. Y. Timbrell
   • J. M. Baribeau
   • J. P. McCaffrey

   OriginalPaper Pages: 657 - 663

10. Radiation sensitivity of buried oxides

    • R. K. Lawrence
    • H. L. Hughes
    • R. E. Stahlbush

    OriginalPaper Pages: 665 - 670

11. Circuit related issues due to radiation in hostile environments

    • J. R. Hauser
    • S. E. Kerns

    OriginalPaper Pages: 671 - 688

12. Single event upset and total dose radiation effects on rad-hard SRAMs

    • V. Zajic
    • K. Kloesel
    • E. G. Stassinopulos

    OriginalPaper Pages: 689 - 697

13. X-ray lithography, where it is now, and where it is going

    • Juan R. Maldonado

    OriginalPaper Pages: 699 - 709

14. Defect centroid, patial distribution, and areal density in process-induced radiation-damaged IGFETs with gate insulators grown at 1000 and 800° C

    • M. Walters
    • A. Reisman

    OriginalPaper Pages: 711 - 720

15. Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography

    • C. C. H. Hsu
    • L. K. Wang
    • T. H. Ning

    OriginalPaper Pages: 721 - 725

16. A study of x-ray damage effects on the short channel behavior of IGFET’s

    • Pradeep K. Bhattacharya
    • Arnold Reisman

    OriginalPaper Pages: 727 - 732

17. Hole trapping in E-beam irradiated SiO₂ films

    • J. M. Aitken
    • R. F. Dekeersmaecker

    OriginalPaper Pages: 733 - 737

18. Deterioration of insulating films on silicon wafer due to surface charging during ion implantation

    • K. Nakanishi
    • H. Muto
    • S. Kato

    OriginalPaper Pages: 739 - 746

19. Influence of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures

    • D. J. As
    • Th. Frey
    • H. P. Zappe

    OriginalPaper Pages: 747 - 751

20. Research of SiO₂/InP structure prepared by photo-CVD

    • C. J. Huang
    • Y. K. Su

    OriginalPaper Pages: 753 - 756

21. RTA removal of E-beam-induced damage in GaAs-AlGaAs heterostructures as determined by magnetotransport characterization

    • Doran D. Smith
    • T. Fink
    • Mary-Lloyd Saunders

    OriginalPaper Pages: 757 - 760