Applications of electron paramagnetic resonance to studies of defects in insulators and semiconductors

Abstract

Electron paramagnetic resonance (EPR) which is the absorption of electromagnetic waves in the microwave frequency domain has been used for many years to study magnetic dipoles in crystals subjected to magnetic fields. These magnetic dipoles arise from electrons in the material whose intrinsic spin is exposed due to processes such as doping with transition metal ions, doping with ions whose spin is not locked up with chemical bonding and irradiation with bond breaking energy. The sensitivity of the EPR technique depends on such experimental parameters as, incident microwave power, size of the sample, quality of the microwave cavity, number of paramagnetic spins participating in the absorption, width of the EPR resonance line, temperature of the sample and relaxation time of the spin system to the lattice. The experimental spectrum is described by parameters which by the application of basic quantum mechanics can be related to properties of the wave function of the electron spin in the crystal environment such as bonding directions to neighboring ions in the crystal lattice. Some examples of this analysis will be presented to show how EPR is used in the study of defects in Si and SiO₂.