Considerations for the development of radiation resistant devices and VLSI circuits Nadim F. Haddad OriginalPaper Pages: 603 - 607
Comparison of the effects of ionizing radiation at twelve dose rates from 0.0015 to 100 rad(Si)/s C. A. GobenW. E. PriceJ. R. Coss OriginalPaper Pages: 609 - 615
A comparison of the radiation tolerance of the STC bipolar, CMOS and merged bipolar/CMOS processes C. J. WalkerD. E. BoyleR. Ellis OriginalPaper Pages: 617 - 627
Radiation studies with accelerator generated fast neutrons Gunter H. R. KegelCauson K. C. Jen OriginalPaper Pages: 629 - 632
Applications of electron paramagnetic resonance to studies of defects in insulators and semiconductors L. G. Rowan OriginalPaper Pages: 633 - 636
A comparison of commercially available quasistatic meters and methods Larry Sadwick OriginalPaper Pages: 637 - 650
A new electron-trapping model for the gate insulator of insulated gate field-effect transistors C. T. SuneA. ReismanC. K. Williams OriginalPaper Pages: 651 - 655
Charge collection microscopy of annealing induced electrically active defects in Si1−xGex/Si strained layer epitaxy P. Y. TimbrellJ. M. BaribeauJ. P. McCaffrey OriginalPaper Pages: 657 - 663
Radiation sensitivity of buried oxides R. K. LawrenceH. L. HughesR. E. Stahlbush OriginalPaper Pages: 665 - 670
Circuit related issues due to radiation in hostile environments J. R. HauserS. E. Kerns OriginalPaper Pages: 671 - 688
Single event upset and total dose radiation effects on rad-hard SRAMs V. ZajicK. KloeselE. G. Stassinopulos OriginalPaper Pages: 689 - 697
X-ray lithography, where it is now, and where it is going Juan R. Maldonado OriginalPaper Pages: 699 - 709
Defect centroid, patial distribution, and areal density in process-induced radiation-damaged IGFETs with gate insulators grown at 1000 and 800° C M. WaltersA. Reisman OriginalPaper Pages: 711 - 720
Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography C. C. H. HsuL. K. WangT. H. Ning OriginalPaper Pages: 721 - 725
A study of x-ray damage effects on the short channel behavior of IGFET’s Pradeep K. BhattacharyaArnold Reisman OriginalPaper Pages: 727 - 732
Hole trapping in E-beam irradiated SiO2 films J. M. AitkenR. F. Dekeersmaecker OriginalPaper Pages: 733 - 737
Deterioration of insulating films on silicon wafer due to surface charging during ion implantation K. NakanishiH. MutoS. Kato OriginalPaper Pages: 739 - 746
Influence of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures D. J. AsTh. FreyH. P. Zappe OriginalPaper Pages: 747 - 751
Research of SiO2/InP structure prepared by photo-CVD C. J. HuangY. K. Su OriginalPaper Pages: 753 - 756
RTA removal of E-beam-induced damage in GaAs-AlGaAs heterostructures as determined by magnetotransport characterization Doran D. SmithT. FinkMary-Lloyd Saunders OriginalPaper Pages: 757 - 760