1. Rapid thermal nitridation of thin SiO₂ films

   • D. Henscheid
   • M. N. Kozicki
   • R. J. Graham

   OriginalPaper Pages: 99 - 104

2. Low resistivep-type ZnSe: A key for an efficient blue electroluminescent device

   • N. Stücheli
   • E. Bucher

   OriginalPaper Pages: 105 - 109

3. Growth condition dependence for GaAs selective epitaxial growth by molecular beam epitaxy

   • A. Okamoto
   • K. Ohata

   OriginalPaper Pages: 111 - 115

4. Effect of inherent deformations of leadframes on bleedability of plastic dip

   • S. L. Kerk
   • S. C. Tay
   • S. J. Hu

   OriginalPaper Pages: 117 - 121

5. Annealing behavior of undoped bulk GaAs

   • Z. Q. Fang
   • L. Shan
   • W. M. Lau

   OriginalPaper Pages: 123 - 129

6. Halogen lamp rapid thermal annealing of Si- and Be-implanted In_0.53Ga_0.47As

   • Mulpuri V. Rao
   • Sadanand M. Gulwadi
   • Olaleye A. Aina

   OriginalPaper Pages: 131 - 136

7. Investigation of the interface region produced by molecular beam epitaxial regrowth

   • D. Biswas
   • P. R. Berger
   • P. K. Bhattacharya

   OriginalPaper Pages: 137 - 142

8. The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation

   • Yudong Kim
   • Hisham Z. Massoud
   • Richard B. Fair

   OriginalPaper Pages: 143 - 150

9. Effects of melt composition on deep electronic states and compensation ratios inn-type LEC gallium arsenide

   • R. Fornari
   • E. Gombia
   • R. Mosca

   OriginalPaper Pages: 151 - 155

10. The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen

    • J. Ryu
    • H. J. Kim
    • R. F. Davis

    OriginalPaper Pages: 157 - 165

11. MIM capacitor fabrication and assessment for GaAs MMICs

    • J. P. Nagle
    • S. P. S. Sangha
    • P. J. West

    OriginalPaper Pages: 167 - 169

12. Introduction to the special emphasis section on defects

    EditorialNotes Pages: 171 - 171

13. Electrically active defects in shallow pre-amorphisedp ⁺ n junctions in silicon

    • S. D. Brotherton
    • J. R. Ayres
    • J. P. Gowers

    OriginalPaper Pages: 173 - 184

14. Structural and electrical properties ofn-type bulk gallium arsenide grown from non-stoichiometric melts

    • R. Fornari
    • C. Frigeri
    • R. Gleichmann

    OriginalPaper Pages: 185 - 189

15. Automated and calibrated whole wafer etch pit density measurements in GaAs

    • J. S. Sewell
    • S. C. Dudley
    • D. C. Walters

    OriginalPaper Pages: 191 - 197

16. Metastable defect structures in elemental and compound semiconductors

    • J. L. Benton

    OriginalPaper Pages: 199 - 206

17. DX centers in Sn-doped Ga_0.7Al_0.3As

    • T. M. Hayes
    • D. L. Williamson
    • A. Rudra

    OriginalPaper Pages: 207 - 208

18. Observation of differences in the quenching of the Photocurrent in GaAs containing EL2 and EL0

    • W. C. Mitchel
    • Laura S. Rea
    • P. W. Yu

    OriginalPaper Pages: 209 - 213

19. Foreword

    EditorialNotes Pages: 215 - 216

20. Dense, denser, densest ...

    • E. J. Rymaszewski

    OriginalPaper Pages: 217 - 220

21. Multichip packaging and the need for new materials

    • J. W. Balde

    OriginalPaper Pages: 221 - 227

22. Materials for high-density electronic packaging and interconnections in the higher packaging levels

    • C. A. Neugebauer

    OriginalPaper Pages: 229 - 239

23. An overview of laminate materials with enhanced dielectric properties

    • Stephen J. Mumby

    OriginalPaper Pages: 241 - 250

24. Comparison of superconducting and normal conducting high speed interconnections at 80 K

    • F. Lange

    OriginalPaper Pages: 251 - 257

25. Integrated optoelectronic materials and circuits for optical interconnects

    • L. D. Hutcheson

    OriginalPaper Pages: 259 - 265

26. Thermal analysis of a multi-chip package design

    • Robert Darveaux
    • Lih-Tyng Hwang
    • Iwona Turlik

    OriginalPaper Pages: 267 - 274

27. High resolution optical interference investigation of deformation due to thermal expansion mismatch around plated through holes in multilayer circuit boards

    • D. A. Tossell
    • K. H. G. Ashbee

    OriginalPaper Pages: 275 - 286

28. Dielectric properties of FR-4 laminates as a function of thickness and the electrical frequency of the measurement

    • Stephen J. Mumby
    • Jih Yuan

    OriginalPaper Pages: 287 - 292

29. High rate magnetron RIE of thick polyimide films for advanced computer packaging applications

    • Giora J. Dishon
    • Stephen M. Bobbio
    • Russell F. Jewett

    OriginalPaper Pages: 293 - 299

30. The parylene-aluminum multilayer interconnection system for wafer scale integration and wafer scale hybrid packaging

    • N. Majid
    • S. Dabral
    • J. F. McDonald

    OriginalPaper Pages: 301 - 311

31. Polyimidesiloxanes: Emerging materials for advanced packaging applications

    • Chung J. Lee

    OriginalPaper Pages: 313 - 318

32. A copper/polyimide Metal-base packaging technology

    • Hayato Takasago
    • Kohei Adachi
    • Mitsuyuki Takada

    OriginalPaper Pages: 319 - 326

33. Void-free Au-Sn eutectic bonding of GaAs dice and its characterization using scanning acoustic microscopy

    • Goran Matljasevic
    • Chin C. Lee

    OriginalPaper Pages: 327 - 337

34. The role of electrochemical migration and moisture adsorption on the reliability of metallized ceramic substrates

    • Garry W. Warren
    • Paul Wynblatt
    • Mehrooz Zamanzadeh

    OriginalPaper Pages: 339 - 353