Abstract
Polyimides have been considered as interlayer dielectrics for wafer scale integration (WSI) and wafer scale hybrid packaging (WSHP). However, high temperature curing steps for polyimide lead to large stresses in polyimide films. This is due to differing thermal expansion coefficients of the metal conductor, insulator and substrate materials causing yield and reliability problems. Polyimides also require the use of solvents, and tend to outgas during subsequent processing. They tend to absorb moisture with resulting degradation of dielectric constants. Also, the spin on method used to apply and planarize polyimide layers exhibits nonuniformity of thickness on large wafers. In this paper we examine parylene (Poly-p-xylylene) and some of its derivatives as possible interlayer dielectrics due to some of their attractive features. Parylene has a low dielectric constant. It can be vapor deposited at low temperatures and in vacuum. It is also highly resistant to corrosion and is a clear, transparent material with possible use for optical interconnections. This paper studies the reactive ion etching properties for polyimides and parylenes in an oxygen containing plasma under identical conditions. The etching rates of the parylenes and polyimides have been compared. The surface properties of these polymers are examined. Further, the film growth properties of aluminum deposited on the etched surfaces using the ionized cluster beam are investigated.
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Majid, N., Dabral, S. & McDonald, J.F. The parylene-aluminum multilayer interconnection system for wafer scale integration and wafer scale hybrid packaging. J. Electron. Mater. 18, 301–311 (1989). https://doi.org/10.1007/BF02657422
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DOI: https://doi.org/10.1007/BF02657422