Abstract
The quenching of the photocurrent and photo-Hall effect of several undoped semi-insulating gallium arsenide samples has been measured and compared with the deep-level photoluminescence spectra from neighboring samples. Samples that show either EL2 (0.68 eV) or ELO (0.63 eV) photoluminescence have distinctly different photocurrent quenching behaviors. EL2 samples show a photocurrent decrease of several orders of magnitude, and a change fromn-type to p-type conduction during quenching at 80 K with 1.1 eV light. ELO samples show a reduction in photocurrent of less than an order of magnitude with no change in the carrier type at this temperature. Photo-Hall effect experiments at 80 K indicate that the conduction isn-type for the ELO samples, but changes fromn- to p-type during the quench for the EL2 samples. The temperature dependence of the quenching has also been studied. EL2 samples show little variation in the range 10-80 K, while ELO samples show significant quenching similar to EL2 after the temperature is reduced below 70 K. These results indicate that defects other than EL2 can significantly affect photocurrent quenching experiments.
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References
P. W. Yu and D. C. Waters, Appl. Phys. Lett.41, 863 (1982).
J. Lagowski, D. G. Lin, T. Aoyama, and H. C. Gatos, Appl. Phys. Lett.44, 3361 (1984).
M. Taniguchi and T. Ikoma, Appl. Phys. Lett.45, 691 (1984).
G. M. Martin, A. Mitonneau, and A. Mircea, Electron. Letters13, 191 (1977).
P. W. Yu, Phys. Rev. B31, 8259 (1985).
P. W. Yu, Appl. Phys. Lett.44, 330 (1984).
P. W. Yu, Solid State Comm.43, 953 (1982).
Alice L. Lin, Eric Omelianovski, and Richard H. Bube, J. Appl. Phys.47, 1852 (1976).
W. Walukiewicz, Le Wang, L. Pawlowicz, J. Lagowski, and H. C. Gatos, inSemi-Insulating III-V Materials, 1984, edited by D. C. Look and J. S. Blakemore (Shiva, Nantwick, 1984), p. 255.
S. Nojima, J. Appl. Phys.58, 3485 (1985).
J. Jimenez, P. Hernandez, J. A. de Saja, and J. Bonnafe, Phys. Rev. B35, 3832 (1987).
J. Jimenez, M. A. Gonzolez, J. A. de Saja, and J. Bonnafe, J. Mater. Sci.19, 1207 (1984).
M. Tajima, Jpn. J. Appl. Phys.26, L885 (1987).
M. Tajima, T. Ino, and K. Ishida, Jpn. J. Appl. Phys.26, L1060 (1987).
M. Skowronski, J. Lagowski, and H. C. Gatos, J. Appl. Phys.59, 2451 (1986).
L. Samuelson, P. Omling, and H. G. Grimmeiss, Appl. Phys. Lett.45, 521 (1984).
Yasunori Michizuki and Toshiaki Ikoma, Jpn. J. Appl. Phys.24, L895 (1985).
Akihiro Yahata, Toshio Kikuta, and Koichi Ishida, Jpn. J. Appl. Phys.25, L133 (1986).
Ralph Bray, K. Wan, and J. C. Parker, Phys. Rev. Lett.57, 2434 (1986).
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Mitchel, W.C., Rea, L.S. & Yu, P.W. Observation of differences in the quenching of the Photocurrent in GaAs containing EL2 and EL0. J. Electron. Mater. 18, 209–213 (1989). https://doi.org/10.1007/BF02657410
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DOI: https://doi.org/10.1007/BF02657410