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DX centers in Sn-doped Ga0.7Al0.3As

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Abstract

We have measured and analyzed the extended fine structure on the Sn K-shell x-ray absorption spectra of GaAs and Ga0.7Al0.3As doped with ∼5 x 1018 cm−3 Sn. Our results and their implications for the atomic structure of DX centers are discussed.

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Authors and Affiliations

  1. Physics Department, Colorado School of Mines, 80401, Golden, CO

    T. M. Hayes, D. L. Williamson, A. Outzourhit & P. Small

  2. Laboratory for Solid State Physics and Solar Energy, CNRS Sophia Antipolis, 06560, Valbonne, France

    P. Gibart & A. Rudra

Authors
  1. T. M. Hayes
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  2. D. L. Williamson
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  3. A. Outzourhit
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  4. P. Small
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  5. P. Gibart
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  6. A. Rudra
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Hayes, T.M., Williamson, D.L., Outzourhit, A. et al. DX centers in Sn-doped Ga0.7Al0.3As. J. Electron. Mater. 18, 207–208 (1989). https://doi.org/10.1007/BF02657409

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  • DOI: https://doi.org/10.1007/BF02657409

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