1. Growth of WSi₂ in phosphorous-implanted W/«Si» couples

   • E. Ma
   • B. S. Lim
   • A. H. Hamdi

   OriginalPaper Pages: 207 - 211

2. Application of selective CVD tungsten for low contact resistance via filling to aluminum multilayer interconnection

   • S. Rang
   • R. Chow
   • A. G. Williams

   OriginalPaper Pages: 213 - 216

3. Growth of device quality GaAs by chemical beam epitaxy

   • T. H. Chiu
   • W. T. Tsang
   • C. S. Wu

   OriginalPaper Pages: 217 - 221

4. A complete quantitative model of the isothermal vapor phase epitaxy of (Hg,Cd)Te

   • Zoran Djuric
   • Zoran Djinovic
   • Jozef Piotrowski

   OriginalPaper Pages: 223 - 228

5. Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH₄

   • M. L. Green
   • Y. S. Ali
   • S. Nakahara

   OriginalPaper Pages: 229 - 237

6. Influence of V/III variation on Al_xGa_1-xAs quantum well lasers grown by metalorganic chemical vapor deposition

   • R. G. Waters
   • D. S. Hill

   OriginalPaper Pages: 239 - 241

7. Sputtered dielectric films for GaAs diffusion masks

   • R. J. Roedel
   • H. H. Erkaya
   • J. L. Edwards

   OriginalPaper Pages: 243 - 247

8. Ion beam mixing for ohmic contact formation ton-Type GaAs

   • Zhao Jie
   • D. A. Thompson

   OriginalPaper Pages: 249 - 254

9. On the carrier profiling of GaAsSb/GaAs heterostructures

   • J. H. Zhao
   • A. Z. Li
   • A. G. Milnes

   OriginalPaper Pages: 255 - 261