Abstract
A quantitative model of isothermal vapor phase epitaxy is proposed. It can be applied to both closed and open tube systems. This model enables the prediction of compositional profiles of the layers grown by isothermal vapor phase epitaxy with dependence on the growth parameters and thermodynamical data of the (Hg,Cd)Te system. The dependence of compositional profiles of the ISOVPE layers on temperature and time of deposition, source to substrate spacing, mercury and inert gas pressures are discussed for both solid and liquid sources. Modification of the compositional profiles by the postgrowth annealing has also been studied. The proper choice of growth and annealing parameters makes the optimization of the profiles possible. The calculated profiles are compared with the experimental data and a satisfactory quantitative fit is found in most cases. The possible reasons for remaining discrepancies are discussed.
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Djuric, Z., Djinovic, Z., Lazic, Z. et al. A complete quantitative model of the isothermal vapor phase epitaxy of (Hg,Cd)Te. J. Electron. Mater. 17, 223–228 (1988). https://doi.org/10.1007/BF02652182
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DOI: https://doi.org/10.1007/BF02652182