Abstract
The thermal reaction of rf-sputter-deposited tungsten films with a (100) silicon substrate is investigated by vacuum furnace annealing and rapid thermal annealing. An irradiation of the W/Si interface by a phosphorous ion beam at room temperature prior to annealing promotes a uniform interfacial growth of WSi2. The growth of WSi2 follows diffusion-controlled kinetics during both furnace annealing and rapid thermal processing. A growth law of x2 = kt is obtained for furnace annealing between 690 and 740° C, where x is the thickness of the compound, t is the annealing duration after an initial incubation period and k = 62 (cm2/s) exp (−-3.0 eV/kT). The surface smoothness of the suicide films improves with increasing ion dose.
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Ma, E., Lim, B.S., Nicolet, MA. et al. Growth of WSi2 in phosphorous-implanted W/«Si» couples. J. Electron. Mater. 17, 207–211 (1988). https://doi.org/10.1007/BF02652179
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DOI: https://doi.org/10.1007/BF02652179