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Influence of V/III variation on AlxGa1-xAs quantum well lasers grown by metalorganic chemical vapor deposition

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Abstract

The role of the V-III ratio during growth on the optical and electrical properties of AlxGa1-x As laser material grown by metalorganic chemical vapor deposition has been investigated. Controlled studies involving more than twenty growth runs show that this parameter has a profound influence on both device performance and reliability.

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Authors and Affiliations

  1. McDonnell Douglas Astronautics Co., Opto-Electronics Center, 350 Executive Blvd., 10523, Elmsford, NY

    R. G. Waters & D. S. Hill

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  1. R. G. Waters
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  2. D. S. Hill
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Waters, R.G., Hill, D.S. Influence of V/III variation on AlxGa1-xAs quantum well lasers grown by metalorganic chemical vapor deposition. J. Electron. Mater. 17, 239–241 (1988). https://doi.org/10.1007/BF02652184

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  • DOI: https://doi.org/10.1007/BF02652184

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