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On the carrier profiling of GaAsSb/GaAs heterostructures

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Abstract

Carrier profiles of MBE grown Ga(As,Sb)/GaAs heterostructures were studied. In low Sb content samples of Ga(As,Sb)/GaAs grown by MBE the experimentally measured carrier profiles exhibit double dips in concentration, whereas a single large dip is ob-tained for higher Sb content with larger lattice-mismatched samples. The capacitance voltage(C-V) carrier profile of a Schottky barriern- N heterojunction of Au/n-GaAsSb/N-GaAs has been modeled and double dips occur when nonuniform doping is present which may explain the experimentally observed double dips in a GaAs0.95Sb0.05/GaAs specimen. For large lattice mismatch and therefore large heterointerface charge density in the model, the accumulation peak due to ΔEc is shown to be overwhelmed by a pro-nounced single dip as observed in higher Sb content samples such as GaAs0.91Sb0.09/ GaAs and GaAs/GaAs0.9Sb0.1.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Carnegie Mellon University, 15213, Pittsburgh, PA

    J. H. Zhao, A. Z. Li, T. E. Schlesinger & A. G. Milnes

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  1. J. H. Zhao
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  2. A. Z. Li
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  3. T. E. Schlesinger
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  4. A. G. Milnes
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Zhao, J.H., Li, A.Z., Schlesinger, T.E. et al. On the carrier profiling of GaAsSb/GaAs heterostructures. J. Electron. Mater. 17, 255–261 (1988). https://doi.org/10.1007/BF02652187

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  • DOI: https://doi.org/10.1007/BF02652187

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