Volume 17, Issue 3 | Journal of Electronic Materials

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Volume 17, Issue 3

May 1988

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9 articles in this issue

Growth of WSi₂ in phosphorous-implanted W/«Si» couples
E. Ma
B. S. Lim
A. H. Hamdi
OriginalPaper Pages: 207 - 211
Application of selective CVD tungsten for low contact resistance via filling to aluminum multilayer interconnection
S. Rang
R. Chow
A. G. Williams
OriginalPaper Pages: 213 - 216
Growth of device quality GaAs by chemical beam epitaxy
T. H. Chiu
W. T. Tsang
C. S. Wu
OriginalPaper Pages: 217 - 221
A complete quantitative model of the isothermal vapor phase epitaxy of (Hg,Cd)Te
Zoran Djuric
Zoran Djinovic
Jozef Piotrowski
OriginalPaper Pages: 223 - 228
Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH₄
M. L. Green
Y. S. Ali
S. Nakahara
OriginalPaper Pages: 229 - 237
Influence of V/III variation on Al_xGa_1-xAs quantum well lasers grown by metalorganic chemical vapor deposition
R. G. Waters
D. S. Hill
OriginalPaper Pages: 239 - 241
Sputtered dielectric films for GaAs diffusion masks
R. J. Roedel
H. H. Erkaya
J. L. Edwards
OriginalPaper Pages: 243 - 247
Ion beam mixing for ohmic contact formation ton-Type GaAs
Zhao Jie
D. A. Thompson
OriginalPaper Pages: 249 - 254
On the carrier profiling of GaAsSb/GaAs heterostructures
J. H. Zhao
A. Z. Li
A. G. Milnes
OriginalPaper Pages: 255 - 261