1. Impedance Characteristics of γ-Irradiated (TlGaSe₂)_{1 –x}(TlInS₂)_x Solid Solutions

   • R. M. Sardarly
   • F. T. Salmanov
   • R. M. Abbasli

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 June 2020 Pages: 615 - 622

   

2. Charge-Transfer Features in Zinc Sulfide Doped Layers in a Low-Frequency Alternating Electric Field

   • V. T. Avanesyan
   • A. B. Zharkoy
   • A. V. Rakina

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 June 2020 Pages: 623 - 626

   

3. AC Electrical Conductivity of FeGaInSe₄

   • N. N. Niftiyev
   • F. M. Mammadov
   • M. B. Muradov

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 June 2020 Pages: 627 - 629

   

4. Optical Properties and Critical Points of PbSe Nanostructured Thin Films

   • M. N. Huseynaliyev
   • S. N. Yasinova
   • S. I. Mekhtiyeva

   SURFACES, INTERFACES, AND THIN FILMS 03 June 2020 Pages: 630 - 633

   

5. Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes

   • V. L. Priya
   • N. Prithivikumaran

   SURFACES, INTERFACES, AND THIN FILMS 03 June 2020 Pages: 634 - 640

   

6. Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping

   • A. E. Galashev
   • A. S. Vorob’ev

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 03 June 2020 Pages: 641 - 649

   

7. MBE-Grown In_xGa_{1 –x}As Nanowires with 50% Composition

   • V. G. Dubrovskii
   • R. R. Reznik
   • G. E. Cirlin

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 03 June 2020 Pages: 650 - 653

   

8. Formation of a Two-Phase Structure in CH₃NH₃PbI₃ Organometallic Perovskite

   • D. V. Amasev
   • V. G. Mikhalevich
   • A. G. Kazanskii

   AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 03 June 2020 Pages: 654 - 657

   

9. Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures

   • V. A. Shutaev
   • E. A. Grebenshchikova
   • Yu. P. Yakovlev

   MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 03 June 2020 Pages: 658 - 661

   

10. Atomic Carbon Transport between the Rh Surface and Bulk in Graphene Formation and Destruction

    • E. V. Rut’kov
    • E. Yu. Afanas’eva
    • N. R. Gall

    CARBON SYSTEMS 03 June 2020 Pages: 662 - 665

    

11. Correcting the Characteristics of Silicon Photodiodes by Ion Implantation

    • V. E. Asadchikov
    • I. G. Dyachkova
    • E. V. Nikitina

    PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 666 - 671

    

12. Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

    • L. K. Markov
    • I. P. Smirnova
    • A. S. Pavluchenko

    PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 672 - 676

    

13. Ultimate Lasing Temperature of Microdisk Lasers

    • A. E. Zhukov
    • N. V. Kryzhanovskaya
    • M. V. Maximov

    PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 677 - 681

    

14. Solar-Blind UV Detectors Based on β-Ga₂O₃ Films

    • V. M. Kalygina
    • A. V. Almaev
    • Yu. S. Petrova

    PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 682 - 686

    

15. Silicon Light-Emitting Diodes with Luminescence from (113) Defects

    • A. E. Kalyadin
    • K. F. Shtel’makh
    • N. A. Sobolev

    PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 687 - 690

    

16. Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study

    • J. Laifi
    • A. Bchetnia

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 03 June 2020 Pages: 691 - 697