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Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

Charge transport in (TlGaSe2)1 –x(TlInS2)x solid solutions in the frequency range of 20–106 Hz before and after γ irradiation is studied using impedance-spectroscopy methods. The relaxation character of the permittivity dispersion and the nature of the dielectric loss are established. The frequency dependence of the dissipation factor tanδ in the crystals of the (TlGaSe2)1 –x(TlInS2)x solid solutions is caused not only by relaxation polarization, but also by reach-through conductivity. The relaxation times are found to be τ = 10–3 s. It is determined that, in the frequency range of 105–5 × 105 Hz, the electrical conductivity obeys the regularity σ ~ fS (0.1 ≤ S ≤ 1.0), which is indicative of the conductivity over localized states. It is shown that a further increase in the frequency leads to an increase in the ionic conductivity and transition of the system to the superionic state.

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Authors and Affiliations

  1. Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, Az-1143, Baku, Azerbaijan

    R. M. Sardarly, F. T. Salmanov & N. A. Aliyeva

  2. Baku State University, Az-1148, Baku, Azerbaijan

    R. M. Abbasli

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  1. R. M. Sardarly
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  2. F. T. Salmanov
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  3. N. A. Aliyeva
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Correspondence to R. M. Sardarly.

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Translated by E. Bondareva

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Sardarly, R.M., Salmanov, F.T., Aliyeva, N.A. et al. Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions. Semiconductors 54, 615–622 (2020). https://doi.org/10.1134/S1063782620060159

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  • DOI: https://doi.org/10.1134/S1063782620060159

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