Abstract
The effect of annealing of a CH3NH3PbI3 organometallic perovskite film on its electrical, photoelectrical, and optical properties is studied. It is shown that annealing at the temperature Ta > 140°C results in the formation of a two-phase structure consisting of perovskite and lead iodide, whose relative content depends on the conditions of annealing, specifically, on the annealing temperature. The formation of PbI2 in the perovskite structure yields a decrease in the conductivity and photoconductivity of the material. The studies suggest the possibility of the formation of planar structures composed of semiconductor materials with different band gaps, 1.6 eV (CH3NH3PbI3) and 2.4 eV (PbI2).
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Funding
The experimental part of the study was supported by the Russian Foundation for Basic Research, project no. 18-32-00417, and the part of the study concerned with analysis of the results was supported by the Russian Science Foundation, project no. 18-13-00409.
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Translated by E. Smorgonskaya
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Amasev, D.V., Mikhalevich, V.G., Tameev, A.R. et al. Formation of a Two-Phase Structure in CH3NH3PbI3 Organometallic Perovskite. Semiconductors 54, 654–657 (2020). https://doi.org/10.1134/S1063782620060020
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DOI: https://doi.org/10.1134/S1063782620060020