Volume 51, Issue 8

Search all Semiconductors articles

August 2017

32 articles in this issue

Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)]_m[(Bi, Sb)₂(Te, Se)₃]_n (m, n = 0, 1, 2,...) family within the theory of closely packed spheres
M. A. Korzhuev
A. B. Mihajlova
E. S. Avilov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 969 - 971
Anisotropy of the thermopower in higher silicide of transitions metals
V. S. Kusnetsova
V. K. Zaitsev
S. V. Novikov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 972 - 975
Response of thermoelectric parameters of Bi_0.5Sb_1.5Te₃ films to secondary recrystallization
Yu. A. Boykov
V. A. Danilov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 976 - 978
Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity
Yu. P. Lebedev
A. S. Ivanov
A. G. Chuyko
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 979 - 980
Development of a mathematical model for optimizing the design of an automotive thermoelectric generator taking into account the influence of its hydraulic resistance on the engine power
R. A. Poshekhonov
G. A. Arutyunyan
A. I. Leontyev
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 981 - 985
Thermoelements from antimony- and bismuth-chalcogenide alloys
L. D. Ivanova
I. Yu. Nikhezina
A. A. Mel’nikov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 986 - 988
Specific features of the transport properties of the Lu_0.1Bi_1.9Te₃ compound
M. N. Yaprintsev
R. A. Lyubushkin
O. N. Ivanov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 989 - 991
On the band structure of Sb₂Te_3–xSe_x (0 ≤ x ≤ 0.1): Kinetic and optical data
S. A. Nemov
Yu. V. Ulashkevich
M. B. Jafarov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 992 - 995
Contact resistance in spark plasma sintered segmented legs
I. A. Drabkin
V. B. Osvensky
O. E. Narozhnaia
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 996 - 998
CeB₆ thin films produced on different substrates by electron-beam deposition
A. A. Kuzanyan
A. S. Kuzanyan
S. Kh. Pilosyan
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 999 - 1001
Thermoelectric properties of Bi₂Te_2.4Se_0.6 solid solutions of different particle-size composition
L. D. Ivanova
Yu. V. Granatkina
A. A. Melnikov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1002 - 1004
Thermoelectric properties of the Mg₂Ge_0.3Sn_0.7 solid solution with p-type conductivity
G. N. Isachenko
A. Yu. Samunin
P. P. Konstantinov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1005 - 1008
Optimization of a segmented generating leg
I. A. Drabkin
V. B. Osvenskii
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1009 - 1011
Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics
L. V. Prokofieva
F. S. Nasredinov
A. A. Shabaldin
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1012 - 1016
Superconducting properties of (Pb_0.05Sn_0.95)Te doped with indium under conditions of hydrostatic compression
N. Yu. Mikhailin
R. V. Parfeniev
G. O. Andrianov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1017 - 1020
Structure of Bi₂Se_0.3Te_2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method
V. D. Demcheglo
A. I. Voronin
V. F. Ponomaryov
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1021 - 1023
Thermoelectric properties of Bi_0.5Sb_1.5Te₃ ribbons prepared by melt spinning
A. T. Burkov
S. V. Novikov
Y. Yan
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1024 - 1026
Mn_0.1Ag_0.9In_4.7S_7.6 single crystals: Crystal structure, band gap, and thermal expansion
I. V. Bodnar
Chan Bin Tkhan
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 25 August 2017 Pages: 1027 - 1030
High-temperature diffusion of magnesium in dislocation-free silicon
V. B. Shuman
Yu. A. Astrov
L. M. Portsel
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 25 August 2017 Pages: 1031 - 1033
Complex structure of optical transitions from the core d-levels of InAs and InSb crystals
V. V. Sobolev
D. A. Perevoshchikov
Electronic Properties of Semiconductors 25 August 2017 Pages: 1034 - 1040
Impurity levels in Hg₃In₂Te₆ crystals
S. M. Chupyra
O. G. Grushka
S. V. Bilichuk
Electronic Properties of Semiconductors 25 August 2017 Pages: 1041 - 1043
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers
A. A. Lebedev
B. Ya. Ber
V. V. Kozlovski
Spectroscopy, Interaction with Radiation 25 August 2017 Pages: 1044 - 1046
Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers
K. S. Sekerbayev
Ye. T. Taurbayev
T. I. Taurbayev
Surfaces, Interfaces, and Thin Films 25 August 2017 Pages: 1047 - 1051
On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account
M. B. Kerimi
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 25 August 2017 Pages: 1052 - 1061
Influence of traps in silicon dioxide on the breakdown of MOS structures
O. V. Aleksandrov
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 25 August 2017 Pages: 1062 - 1066
Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions
I. M. Gavrilin
D. G. Gromov
S. A. Gavrilov
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 25 August 2017 Pages: 1067 - 1071
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)
V. Yu. Davydov
D. Yu. Usachov
A. A. Lebedev
Carbon Systems 25 August 2017 Pages: 1072 - 1080
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
T. T. Mnatsakanov
A. G. Tandoev
J. W. Palmour
Physics of Semiconductor Devices 25 August 2017 Pages: 1081 - 1086
Experimental studies of the effects of atomic ordering in epitaxial Ga_xIn_1–xP alloys on their structural and morphological properties
P. V. Seredin
A. S. Lenshin
Tatiana Prutskij
Fabrication, Treatment, and Testing of Materials and Structures 25 August 2017 Pages: 1087 - 1092
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)
M. V. Lebedev
T. V. Lvova
I. V. Sedova
Fabrication, Treatment, and Testing of Materials and Structures 25 August 2017 Pages: 1093 - 1100
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
L. A. Sokura
Ya. A. Parkhomenko
N. A. Bert
Fabrication, Treatment, and Testing of Materials and Structures 25 August 2017 Pages: 1101 - 1105
Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
E. A. Surovegina
E. V. Demidov
J. E. Batler
Erratum 25 August 2017 Pages: 1106 - 1106

Volume 51, Issue 8

Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)]_m[(Bi, Sb)₂(Te, Se)₃]_n (m, n = 0, 1, 2,...) family within the theory of closely packed spheres

Anisotropy of the thermopower in higher silicide of transitions metals

Response of thermoelectric parameters of Bi_0.5Sb_1.5Te₃ films to secondary recrystallization

Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity

Development of a mathematical model for optimizing the design of an automotive thermoelectric generator taking into account the influence of its hydraulic resistance on the engine power

Thermoelements from antimony- and bismuth-chalcogenide alloys

Specific features of the transport properties of the Lu_0.1Bi_1.9Te₃ compound

On the band structure of Sb₂Te_3–xSe_x (0 ≤ x ≤ 0.1): Kinetic and optical data

Contact resistance in spark plasma sintered segmented legs

CeB₆ thin films produced on different substrates by electron-beam deposition

Thermoelectric properties of Bi₂Te_2.4Se_0.6 solid solutions of different particle-size composition

Thermoelectric properties of the Mg₂Ge_0.3Sn_0.7 solid solution with p-type conductivity

Optimization of a segmented generating leg

Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics

Superconducting properties of (Pb_0.05Sn_0.95)Te doped with indium under conditions of hydrostatic compression

Structure of Bi₂Se_0.3Te_2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method

Thermoelectric properties of Bi_0.5Sb_1.5Te₃ ribbons prepared by melt spinning

Mn_0.1Ag_0.9In_4.7S_7.6 single crystals: Crystal structure, band gap, and thermal expansion

High-temperature diffusion of magnesium in dislocation-free silicon

Complex structure of optical transitions from the core d-levels of InAs and InSb crystals

Impurity levels in Hg₃In₂Te₆ crystals

Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers

Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers

On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account

Influence of traps in silicon dioxide on the breakdown of MOS structures

Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions

Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

Experimental studies of the effects of atomic ordering in epitaxial Ga_xIn_1–xP alloys on their structural and morphological properties

Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)

InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates

Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

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