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Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization

  • XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
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Abstract

Flash evaporation is used to grow Bi0.5Sb1.5Te3 films 1200 nm thick on mica substrates. The average lateral crystallite sizes in the as-grown films are ~800 nm. The (0001) plane in the crystallites is preferentially parallel to the substrate plane. After heat treatment in an argon atmosphere, the effective lateral size of crystallites in which the third-order axis is perpendicular to the substrate plane increased by a factor of 3–5. The crystallites were preferentially oriented in the substrate plane as well. The thermoelectric-power parameter of Bi0.5Sb1.5Te3 films after their heat treatment in an inert environment increased approximately twofold to values close to that of the corresponding single crystals.

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References

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    Yu. A. Boykov & V. A. Danilov

Authors
  1. Yu. A. Boykov
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  2. V. A. Danilov
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Correspondence to Yu. A. Boykov.

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Original Russian Text © Yu.A. Boykov, V.A. Danilov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 8, pp. 1018–1020.

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Boykov, Y.A., Danilov, V.A. Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization. Semiconductors 51, 976–978 (2017). https://doi.org/10.1134/S1063782617080048

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  • DOI: https://doi.org/10.1134/S1063782617080048

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