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Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method

  • XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
  • Published:
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Abstract

The property anisotropy in Bi2Se0.3Te2.7 alloy is analyzed by constructing index surfaces for the thermoelectric figure of merit and thermal expansion coefficient. Texture is an important factor forming the property anisotropy and technological applicability of an ingot for fabricating modules. The property anisotropy is analyzed based on studying the texture in ingots produced by the modified Bridgman method (thermoelectric plate growth in a flat cavity). Analysis of the texture shows that not only the crystallization rate, but also the crystallization cavity design is an important factor for the proposed crystallization method, affecting the formation of the thermoelectric-material structure. As the plate thickness is decreased by changing the heat removal conditions in a thin gap, a more perfect structure can be obtained.

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Authors and Affiliations

  1. National University of Science and Technology “MISiS”, Moscow, 119079, Russia

    V. D. Demcheglo, A. I. Voronin, N. Yu. Tabachkova & V. T. Bublik

  2. Crystal Ltd., Korolev, Moscow region, 141060, Russia

    V. F. Ponomaryov

Authors
  1. V. D. Demcheglo
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  2. A. I. Voronin
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  3. N. Yu. Tabachkova
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  4. V. T. Bublik
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  5. V. F. Ponomaryov
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Corresponding author

Correspondence to V. D. Demcheglo.

Additional information

Original Russian Text © V.D. Demcheglo, A.I. Voronin, N.Yu. Tabachkova, V.T. Bublik, V.F. Ponomaryov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 8, pp. 1064–1067.

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Demcheglo, V.D., Voronin, A.I., Tabachkova, N.Y. et al. Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method. Semiconductors 51, 1021–1023 (2017). https://doi.org/10.1134/S1063782617080085

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  • DOI: https://doi.org/10.1134/S1063782617080085

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