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Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers

  • Surfaces, Interfaces, and Thin Films
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Abstract

The infrared optical properties of anisotropic mesoporous silicon films containing free charge carriers (holes) are studied experimentally and theoretically. The results of simulation of the optical properties of the produced samples in the effective-medium approximation show a heavy dependence of the birefringence, reflection anisotropy, and dichroism on the concentration of free charge carriers. The unsteady behavior of the differential transmittance recorded for the samples at mutually perpendicular polarization directions of light are attributed to the effect of charge carriers with a concentration on the order of 1019 cm–3. The results of the study suggest that anisotropic silicon nanostructures are promising materials for infrared photonics and terahertz engineering.

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Authors and Affiliations

  1. Scientific-Research Institute of Experimental and Theoretical Physics, Al-Farabi Kazakh National University, Almaty, 050040, Kazakhstan

    K. S. Sekerbayev, Ye. T. Taurbayev & T. I. Taurbayev

  2. National Nanotechnology Laboratory of Open Type, Al-Farabi Kazakh National University, Almaty, 050040, Kazakhstan

    K. S. Sekerbayev, Ye. T. Taurbayev & T. I. Taurbayev

  3. Faculty of Physics, Moscow State University, Moscow, 119991, Russia

    A. I. Efimova & V. Yu. Timoshenko

  4. National Research Nuclear University “MEPhI”, Moscow, 115409, Russia

    V. Yu. Timoshenko

Authors
  1. K. S. Sekerbayev
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  2. Ye. T. Taurbayev
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  3. A. I. Efimova
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  4. V. Yu. Timoshenko
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  5. T. I. Taurbayev
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Corresponding author

Correspondence to V. Yu. Timoshenko.

Additional information

Original Russian Text © K.S. Sekerbayev, Ye.T. Taurbayev, A.I. Efimova, V.Yu. Timoshenko, T.I. Taurbayev, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 8, pp. 1091–1095.

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Sekerbayev, K.S., Taurbayev, Y.T., Efimova, A.I. et al. Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers. Semiconductors 51, 1047–1051 (2017). https://doi.org/10.1134/S1063782617080279

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  • DOI: https://doi.org/10.1134/S1063782617080279

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