Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)] m [(Bi, Sb)2(Te, Se)3] n (m, n = 0, 1, 2,...) family within the theory of closely packed spheres M. A. KorzhuevA. B. MihajlovaE. S. Avilov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 969 - 971
Anisotropy of the thermopower in higher silicide of transitions metals V. S. KusnetsovaV. K. ZaitsevS. V. Novikov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 972 - 975
Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization Yu. A. BoykovV. A. Danilov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 976 - 978
Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity Yu. P. LebedevA. S. IvanovA. G. Chuyko XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 979 - 980
Development of a mathematical model for optimizing the design of an automotive thermoelectric generator taking into account the influence of its hydraulic resistance on the engine power R. A. PoshekhonovG. A. ArutyunyanA. I. Leontyev XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 981 - 985
Thermoelements from antimony- and bismuth-chalcogenide alloys L. D. IvanovaI. Yu. NikhezinaA. A. Mel’nikov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 986 - 988
Specific features of the transport properties of the Lu0.1Bi1.9Te3 compound M. N. YaprintsevR. A. LyubushkinO. N. Ivanov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 989 - 991
On the band structure of Sb2Te3–x Se x (0 ≤ x ≤ 0.1): Kinetic and optical data S. A. NemovYu. V. UlashkevichM. B. Jafarov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 992 - 995
Contact resistance in spark plasma sintered segmented legs I. A. DrabkinV. B. OsvenskyO. E. Narozhnaia XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 996 - 998
CeB6 thin films produced on different substrates by electron-beam deposition A. A. KuzanyanA. S. KuzanyanS. Kh. Pilosyan XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 999 - 1001
Thermoelectric properties of Bi2Te2.4Se0.6 solid solutions of different particle-size composition L. D. IvanovaYu. V. GranatkinaA. A. Melnikov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1002 - 1004
Thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution with p-type conductivity G. N. IsachenkoA. Yu. SamuninP. P. Konstantinov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1005 - 1008
Optimization of a segmented generating leg I. A. DrabkinV. B. Osvenskii XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1009 - 1011
Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics L. V. ProkofievaF. S. NasredinovA. A. Shabaldin XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1012 - 1016
Superconducting properties of (Pb0.05Sn0.95)Te doped with indium under conditions of hydrostatic compression N. Yu. MikhailinR. V. ParfenievG. O. Andrianov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1017 - 1020
Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method V. D. DemchegloA. I. VoroninV. F. Ponomaryov XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1021 - 1023
Thermoelectric properties of Bi0.5Sb1.5Te3 ribbons prepared by melt spinning A. T. BurkovS. V. NovikovY. Yan XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 25 August 2017 Pages: 1024 - 1026
Mn0.1Ag0.9In4.7S7.6 single crystals: Crystal structure, band gap, and thermal expansion I. V. BodnarChan Bin Tkhan Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 25 August 2017 Pages: 1027 - 1030
High-temperature diffusion of magnesium in dislocation-free silicon V. B. ShumanYu. A. AstrovL. M. Portsel Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 25 August 2017 Pages: 1031 - 1033
Complex structure of optical transitions from the core d-levels of InAs and InSb crystals V. V. SobolevD. A. Perevoshchikov Electronic Properties of Semiconductors 25 August 2017 Pages: 1034 - 1040
Impurity levels in Hg3In2Te6 crystals S. M. ChupyraO. G. GrushkaS. V. Bilichuk Electronic Properties of Semiconductors 25 August 2017 Pages: 1041 - 1043
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers A. A. LebedevB. Ya. BerV. V. Kozlovski Spectroscopy, Interaction with Radiation 25 August 2017 Pages: 1044 - 1046
Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers K. S. SekerbayevYe. T. TaurbayevT. I. Taurbayev Surfaces, Interfaces, and Thin Films 25 August 2017 Pages: 1047 - 1051
On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account M. B. Kerimi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 25 August 2017 Pages: 1052 - 1061
Influence of traps in silicon dioxide on the breakdown of MOS structures O. V. Aleksandrov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 25 August 2017 Pages: 1062 - 1066
Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions I. M. GavrilinD. G. GromovS. A. Gavrilov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 25 August 2017 Pages: 1067 - 1071
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) V. Yu. DavydovD. Yu. UsachovA. A. Lebedev Carbon Systems 25 August 2017 Pages: 1072 - 1080
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers T. T. MnatsakanovA. G. TandoevJ. W. Palmour Physics of Semiconductor Devices 25 August 2017 Pages: 1081 - 1086
Experimental studies of the effects of atomic ordering in epitaxial Ga x In1–x P alloys on their structural and morphological properties P. V. SeredinA. S. LenshinTatiana Prutskij Fabrication, Treatment, and Testing of Materials and Structures 25 August 2017 Pages: 1087 - 1092
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) M. V. LebedevT. V. LvovaI. V. Sedova Fabrication, Treatment, and Testing of Materials and Structures 25 August 2017 Pages: 1093 - 1100
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates L. A. SokuraYa. A. ParkhomenkoN. A. Bert Fabrication, Treatment, and Testing of Materials and Structures 25 August 2017 Pages: 1101 - 1105
Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” E. A. SuroveginaE. V. DemidovJ. E. Batler Erratum 25 August 2017 Pages: 1106 - 1106