1. Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell

   • A. A. Gutkin
   • N. S. Averkiev

   Review 07 October 2017 Pages: 1247 - 1273

2. Tight-binding simulation of silicon and germanium nanocrystals

   • A. V. Gert
   • M. O. Nestoklon
   • I. N. Yassievich

   Review 07 October 2017 Pages: 1274 - 1289

3. Effects of local photoexcitation of high-concentration charge carriers in silicon

   • A. M. Musaev

   Electronic Properties of Semiconductors 07 October 2017 Pages: 1290 - 1294

4. Reflectance spectra of p-Bi₂Te₃:Sn crystals in a wide IR region

   • S. A. Nemov
   • Yu. V. Ulashkevich
   • A. A. Allahkhah

   Spectroscopy, Interaction with Radiation 07 October 2017 Pages: 1295 - 1299

5. Interdiffusion and phase formation in the Fe–TiO₂ thin-film system

   • N. N. Afonin
   • V. A. Logacheva

   Surfaces, Interfaces, and Thin Films 07 October 2017 Pages: 1300 - 1305

6. Mechanism of resistive switching in films based on partially fluorinated graphene

   • A. I. Ivanov
   • N. A. Nebogatikova
   • I. V. Antonova

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1306 - 1312

7. Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity

   • L. N. Oveshnikov
   • E. I. Nekhaeva

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1313 - 1320

8. Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation

   • V. B. Bondarenko
   • A. V. Filimonov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1321 - 1325

9. Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots

   • F. B. Bayramov
   • E. D. Poloskin
   • B. Kh. Bairamov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1326 - 1331

10. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

    • F. I. Zubov
    • E. S. Semenova
    • A. E. Zhukov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1332 - 1336

11. Photoluminescence of perovskite CsPbX ₃ (X = Cl, Br, I) nanocrystals and solid solutions on their basis

    • L. B. Matyushkin
    • V. A. Moshnikov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1337 - 1342

12. Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

    • M. P. Mikhailova
    • V. A. Berezovets
    • E. Hulicius

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2017 Pages: 1343 - 1349

13. X-ray photoelectron spectroscopy studies of ZnS _x Se_1–x nanostructures produced in a porous aluminum-oxide matrix

    • A. I. Chukavin
    • R. G. Valeev
    • A. N. Beltiukov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 October 2017 Pages: 1350 - 1353

14. Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation

    • I. M. Vikulin
    • V. E. Gorbachev
    • Sh. D. Kurmashev

    Physics of Semiconductor Devices 07 October 2017 Pages: 1354 - 1359

15. Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

    • N. V. Dikareva
    • B. N. Zvonkov
    • A. A. Dubinov

    Physics of Semiconductor Devices 07 October 2017 Pages: 1360 - 1363

16. Diffusion-Controlled growth of Ge nanocrystals in SiO₂ films under conditions of ion synthesis at high pressure

    • I. E. Tyschenko
    • A. G. Cherkov

    Fabrication, Treatment, and Testing of Materials and Structures 07 October 2017 Pages: 1364 - 1369

17. Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    • G. K. Krivyakin
    • V. A. Volodin
    • J. Stuchlik

    Fabrication, Treatment, and Testing of Materials and Structures 07 October 2017 Pages: 1370 - 1376

18. Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures

    • D. L. Alfimova
    • L. S. Lunin
    • S. N. Chebotarev

    Fabrication, Treatment, and Testing of Materials and Structures 07 October 2017 Pages: 1377 - 1384

19. (FeIn₂S₄) _x · (AgIn₅S₈)_1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap

    • I. V. Bodnar
    • T. G. Barugu
    • Yu. A. Fedotova

    Fabrication, Treatment, and Testing of Materials and Structures 07 October 2017 Pages: 1385 - 1389