On the theory of the two-photon linear photovoltaic effect in n-GaP V. R. RasulovR. Ya. Rasulov Electronic Properties of Semiconductors 19 February 2016 Pages: 145 - 153
Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4) x alloys I. V. BodnarI. A. VictorovS. A. Pauliukavets Electronic Properties of Semiconductors 19 February 2016 Pages: 154 - 157
Photoluminescence properties of thallium-containing GeSe2 and GeSe3 vitreous semiconductors A. A. Babaev Spectroscopy, Interaction with Radiation 19 February 2016 Pages: 158 - 161
On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field V. R. RasulovR. Ya. Rasulov Surfaces, Interfaces, and Thin Films 19 February 2016 Pages: 162 - 166
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy A. V. DunaevD. B. MurinS. A. Pivovarenok Surfaces, Interfaces, and Thin Films 19 February 2016 Pages: 167 - 170
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface A. V. BakulinS. E. Kulkova Surfaces, Interfaces, and Thin Films 19 February 2016 Pages: 171 - 179
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin S. V. RyabtsevO. A. ChuvenkovaE. P. Domashevskaya Surfaces, Interfaces, and Thin Films 19 February 2016 Pages: 180 - 184
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates R. A. KhabibullinA. E. YachmenevP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 19 February 2016 Pages: 185 - 190
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures I. A. AleksandrovK. S. ZhuravlevV. G. Mansurov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 19 February 2016 Pages: 191 - 194
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates G. B. GalievE. A. KlimovP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 19 February 2016 Pages: 195 - 203
GaAs structures with a gate dielectric based on aluminum-oxide layers I. L. KalentyevaO. V. VikhrovaA. V. Kudrin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 19 February 2016 Pages: 204 - 207
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates K. D. MynbaevS. V. ZablotskyS. A. Dvoretsky Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 19 February 2016 Pages: 208 - 211
Composition and optical properties of amorphous a-SiO x :H films with silicon nanoclusters V. A. TerekhovE. I. TerukovE. P. Domashevskaya Amorphous, Vitreous, and Organic Semiconductors 19 February 2016 Pages: 212 - 216
Effect of transverse electric field on the longitudinal current–voltage characteristic of graphene superlattice S. V. KryuchkovE. I. Kukhar’ Carbon Systems 19 February 2016 Pages: 217 - 221
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds D. V. GromovP. P. MaltsevS. A. Polevich Physics of Semiconductor Devices 19 February 2016 Pages: 222 - 227
Pb1–x Eu x Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm D. A. PashkeevYu. G. SelivanovI. I. Zasavitskiy Physics of Semiconductor Devices 19 February 2016 Pages: 228 - 234
Field-effect transistor with 2D carrier systems in the gate and channel V. G. Popov Physics of Semiconductor Devices 19 February 2016 Pages: 235 - 239
Si:Si LEDs with room-temperature dislocation-related luminescence N. A. SobolevA. E. KalyadinD. I. Tetel’baum Physics of Semiconductor Devices 19 February 2016 Pages: 240 - 243
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation V. G. TikhomirovV. E. ZemlyakovV. M. Ustinov Physics of Semiconductor Devices 19 February 2016 Pages: 244 - 248
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties A. E. KalyadinN. A. SobolevE. I. Shek Physics of Semiconductor Devices 19 February 2016 Pages: 249 - 251
Electroluminescence properties of LEDs based on electron-irradiated p-Si N. A. SobolevK. F. Shtel’makhD. Yang Physics of Semiconductor Devices 19 February 2016 Pages: 252 - 256
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon A. V. SachenkoYu. V. KryuchenkoE. I. Terukov Physics of Semiconductor Devices 19 February 2016 Pages: 257 - 260
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements D. N. LobanovA. V. NovikovL. V. Krasilnikova Fabrication, Treatment, and Testing of Materials and Structures 19 February 2016 Pages: 261 - 265
Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic Al2O3 matrices R. G. ValeevD. I. PetukhovA. N. Beltiukov Fabrication, Treatment, and Testing of Materials and Structures 19 February 2016 Pages: 266 - 270
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride D. S. KorolevA. N. MikhaylovD. I. Tetelbaum Fabrication, Treatment, and Testing of Materials and Structures 19 February 2016 Pages: 271 - 275
Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries E. V. AstrovaG. V. LiV. V. Zhdanov Fabrication, Treatment, and Testing of Materials and Structures 19 February 2016 Pages: 276 - 283
