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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

  • Physics of Semiconductor Devices
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Abstract

The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.

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References

  1. M. Malmkvist, S. Wang, and J. V. Grahn, IEEE Trans. Electron Dev. 55, 268 (2008).

    Article  ADS  Google Scholar 

  2. H. Brech, T. Grave, T. Simlinger, and S. Selberherr, IEEE Trans. Electron Dev. 44, 1822 (1998).

    Article  ADS  Google Scholar 

  3. V. Palankovski, R. Quay, and S. Selberherr, IEEE J. Solid State Circuits 36, 1365 (2001).

    Article  Google Scholar 

  4. V. G. Tikhomirov, N. A. Maleev, A. G. Kuzmenkov, Yu. V. Solov’ev, A. G. Gladyshev, M. M. Kulagina, V. E. Zemlyakov, K. V. Dudinov, V. B. Yankevich, A. V. Bobyl’, and V. M. Ustinov, Semiconductors 45, 1352 (2011).

    Article  ADS  Google Scholar 

  5. V. V. Lundin, D. V. Davydov, E. E. Zavarin, M. G. Popov, A. V. Sakharov, E. V. Yakovlev, D. S. Bazarevskii, R. A. Talalaev, A. F. Tsatsulnikov, M. N. Mizerov, and V. M. Ustinov, Tech. Phys. Lett. 41, 213 (2015).

    Article  ADS  Google Scholar 

  6. M. Kramer, PhD Thesis (Eindhoven Univ. of Technology, 2006).

    Google Scholar 

  7. J. Kolník, I. H. Oguzman, K. F. Brennan, R. Wang, and P. P. Ruden, J. Appl. Phys. 81, 726 (1997).

    Article  ADS  Google Scholar 

  8. M. Shirahata, H. Kusano, N. Kotani, S. Kusanoki, and Y. Akasaka, IEEE Trans. Computer-Aided Des. 11, 1114 (1992).

    Article  Google Scholar 

  9. M. J. Hytch, E. Snoeck, and R. Kilaas, Ultramicroscopy 74, 131 (1998).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Saint Petersburg Electrotechnical University “LETI”, ul. Prof. Popova 5, St. Petersburg, 197376, Russia

    V. G. Tikhomirov

  2. Joint Stock Company “Svetlana-Electronpribor”, pr. Engelsa 27, korp. 164, St. Petersburg, 194021, Russia

    V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes & V. N. Vyuginov

  3. National Research University of Electronic Technology (MIET), 4806 proezd 5, Zelenograd, Moscow oblast, 124498, Russia

    V. E. Zemlyakov

  4. Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    W. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsulnikov & M. N. Mizerov

  5. Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    W. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsulnikov & V. M. Ustinov

  6. CEMES-CNRS-Université de Toulouse, 29 Rue Jeanne Marvig, Toulouse, 31055, France

    N. A. Cherkashin

Authors
  1. V. G. Tikhomirov
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  2. V. E. Zemlyakov
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  3. V. V. Volkov
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  4. Ya. M. Parnes
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  5. V. N. Vyuginov
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  6. W. V. Lundin
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  7. A. V. Sakharov
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  8. E. E. Zavarin
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  9. A. F. Tsatsulnikov
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  10. N. A. Cherkashin
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  11. M. N. Mizerov
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  12. V. M. Ustinov
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Corresponding author

Correspondence to V. G. Tikhomirov.

Additional information

Original Russian Text © V.G. Tikhomirov, V.E. Zemlyakov, V.V. Volkov, Ya.M. Parnes, V.N. Vyuginov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, A.F. Tsatsulnikov, N.A. Cherkashin, M.N. Mizerov, V.M. Ustinov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 2, pp. 245–249.

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Tikhomirov, V.G., Zemlyakov, V.E., Volkov, V.V. et al. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation. Semiconductors 50, 244–248 (2016). https://doi.org/10.1134/S1063782616020263

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  • DOI: https://doi.org/10.1134/S1063782616020263

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