Abstract
Defects in mercury-cadmium-telluride heteroepitaxial structures (with 0.3 to 0.4 molar fraction of cadmium telluride) grown by molecular-beam epitaxy on silicon substrates are studied. The low-temperature photoluminescence method reveals that there are comparatively deep levels with energies of 50 to 60 meV and shallower levels with energies of 20 to 30 meV in the band gap. Analysis of the temperature dependence of the minority carrier lifetime demonstrates that this lifetime is controlled by energy levels with an energy of ∼30 meV. The possible relationship between energy states and crystal-structure defects is discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. Mollard, G. Bourgeois, C. Lobre, S. Gout, S. Viollet- Bosson, N. Baier, G. Destefanis, O. Gravrand, J. P. Barnes, and F. Milesi, J. Electron. Mater. 43, 802 (2014).
M. V. Yakushev, V. S. Varavin, V. G. Remesnik, and D. V. Marin, Semiconductors 48, 767 (2014).
A. M. Itsuno, P. Y. Emelie, J. D. Phillips, S. Velicu, C. H. Grein, and P. S. Wijewarnasuriya, J. Electron. Mater. 39, 945 (2010).
C. L. Littler, A. J. Syllaios, and V. C. Lopes, Progr. Cryst. Growth 28, 145 (1994).
C. H. Grein, J. W. Garland, S. Sivananthan, P. S. Wijewarnasuriya, F. Aqariden, and M. Fuchs, J. Electron. Mater. 28, 789 (1999).
P. S. Wijewarnasuriya, M. D. Lange, S. Sivananthan, and J. P. Faurie, J. Electron. Mater. 24, 545 (1995).
M. A. Kinch, F. Aqariden, D. Chandra, P. K. Liao, H. F. Schaake, and H. D. Shih, J. Electron. Mater. 34, 880 (2005).
D. D. Edwall, R. E. DeWames, W. V. McLevige, J. G. Pasko, and J. M. Arias, J. Electron. Mater. 27, 698 (1998).
K. D. Mynbaev, N. L. Bazhenov, M. V. Yakushev, D. V. Marin, V. S. Varavin, Yu. G. Sidorov, and S. A. Dvoretsky, Tech. Phys. Lett. 40, 708 (2014).
K. D. Mynbaev, A. V. Shilyaev, N. L. Bazhenov, A. I. Izhnin, I. I. Izhnin, N. N. Mikhailov, V. S. Varavin, and S. A. Dvoretsky, Semiconductors 49, 367 (2015).
N. L. Bazhenov, K. D. Mynbaev, and G. G. Zegrya, Semiconductors 49, 432 (2015).
N. L. Bazhenov, K. D. Mynbaev, and G. G. Zegrya, Semiconductors 49, 1170 (2015).
S. Krishnamurthy, M. A. Berding, and Z. G. Yu, J. Electron. Mater. 35, 1369 (2006).
S. V. Zablotsky, N. L. Bazhenov, K. D. Mynbaev, M. V. Yakushev, D. V. Marin, V. S. Varavin, and S. A. Dvoretsky, in Proceedings of the International School Conference Saint-Petersburg OPEN 2015 (St.-Petersburg, Russia, 2015), p. 33.
I. I. Izhnin, K. D. Mynbaev, M. V. Yakushev, A. I. Izhnin, E. I. Fitsych, N. L. Bazhenov, A. V. Shilyaev, G. V. Savitskii, R. Jakiela, A. V. Sorochkin, V. S. Varavin, and S. A. Dvoretsky, Semiconductors 46, 1341 (2012).
L. Bubulac, J. Benson, R. Jacobs, A. Stoltz, M. Jaime- Vasquez, L. Almeida, A. Wang, L. Wang, R. Hellmer, T. Golding, J. Dinan, M. Carmody, P. Wijewarnasuriya, M. Lee, M. Vilela, J. Peterson, S. Johnson, D. Lofgreen, and D. Rhiger, J. Electron. Mater. 40, 280 (2011).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © K.D. Mynbaev, S.V. Zablotsky, A.V. Shilyaev, N.L. Bazhenov, M.V. Yakushev, D.V. Marin, V.S. Varavin, S.A. Dvoretsky, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 2, pp. 208–211.
Rights and permissions
About this article
Cite this article
Mynbaev, K.D., Zablotsky, S.V., Shilyaev, A.V. et al. Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates. Semiconductors 50, 208–211 (2016). https://doi.org/10.1134/S1063782616020160
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782616020160