1. Specific features of formation and evolution of a longitudinal autosoliton in p-InSb in a longitudinal magnetic field

   • I. K. Kamilov
   • A. A. Stepurenko
   • A. E. Gummetov

   Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 691 - 698

2. Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals

   • L. A. Kosyachenko
   • O. L. Maslyanchuk
   • T. Aoki

   Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 699 - 704

3. Spin-peierls transition in the random impurity sublattice of a semiconductor

   • A. I. Veinger
   • A. G. Zabrodskii
   • S. I. Goloshchapov

   Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 705 - 711

4. Doping of IV-VI semiconductors and the energy spectrum of holes with resonance states taken into account

   • L. V. Prokofieva
   • Yu. I. Ravich
   • A. A. Shabaldin

   Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 712 - 718

5. The effects of defects on electrical properties of Ag₂S at phase transition

   • F. F. Aliev
   • M. B. Jafarov
   • V. I. Eminova

   Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 719 - 722

6. Innovations in X-ray-induced electron emission spectroscopy (XIEES)

   • K. Ju. Pogrebitsky
   • M. D. Sharkov

   Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 723 - 728

7. Influence of impurities on the thermoelectric properties of layered anisotropic PbBi₄Te₇ compound: Experiment and calculations

   • M. K. Zhitinskaya
   • S. A. Nemov
   • P. P. Konstantinov

   Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 729 - 733

8. Phonon drag of electrons in Ag₂S

   • S. A. Aliev
   • F. F. Aliev
   • R. I. Selim-zade

   Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 734 - 736

9. Nature of forward and reverse saturation currents in metal—semiconductor contacts with the Schottky barrier

   • N. A. Torkhov

   Semiconductor Structures, Interfaces, and Surfaces 27 June 2010 Pages: 737 - 744

10. Effect of microwave treatment on current flow mechanisms in Au-TiB_x-Al-Ti-n⁺-n-n⁺-GaN-Al₂O₃ ohmic contacts

    • A. E. Belyaev
    • N. S. Boltovets
    • V. N. Sheremet

    Semiconductor Structures, Interfaces, and Surfaces 27 June 2010 Pages: 745 - 751

11. Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors

    • Yu. K. Krutogolov

    Semiconductor Structures, Interfaces, and Surfaces 27 June 2010 Pages: 752 - 760

12. Wannier-Stark states in a superlattice of InAs/GaAs quantum dots

    • M. M. Sobolev
    • A. P. Vasil’ev
    • V. N. Nevedomskii

    Low-Dimensional Systems 27 June 2010 Pages: 761 - 765

13. Vibronic properties of organic semiconductors based on phthalocyanine complexes with asymmetrically distributed electron density

    • I. A. Belogorokhov
    • M. N. Martishov
    • D. R. Khokhlov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 27 June 2010 Pages: 766 - 771

14. Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

    • V. R. Kopach
    • M. V. Kirichenko
    • R. V. Zaitsev

    Physics of Semiconductor Devices 27 June 2010 Pages: 772 - 777

15. A high-temperature radiation-resistant rectifier based on p⁺-n junctions in 4H-SiC ion-implanted with aluminum

    • E. V. Kalinina
    • V. G. Kossov
    • G. N. Violina

    Physics of Semiconductor Devices 27 June 2010 Pages: 778 - 788

16. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

    • A. N. Petrunov
    • A. A. Podoskin
    • I. S. Tarasov

    Physics of Semiconductor Devices 27 June 2010 Pages: 789 - 793

17. Mechanism of the GaN LED efficiency falloff with increasing current

    • N. I. Bochkareva
    • V. V. Voronenkov
    • Y. G. Shreter

    Physics of Semiconductor Devices 27 June 2010 Pages: 794 - 800

18. Features of the light current-voltage characteristics of bifacial solar cells based on thin CdTe layers

    • A. V. Meriuts
    • G. S. Khrypunov
    • N. V. Deyneko

    Physics of Semiconductor Devices 27 June 2010 Pages: 801 - 804

19. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

    • D. A. Vinokurov
    • M. A. Ladugin
    • I. S. Tarasov

    Physics of Semiconductor Devices 27 June 2010 Pages: 805 - 807

20. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    • A. F. Tsatsulnikov
    • W. V. Lundin
    • M. N. Mizerov

    Physics of Semiconductor Devices 27 June 2010 Pages: 808 - 811

21. Magnetron-assisted deposition of thin (SiC)_1-x(AlN)_x alloy films

    • M. K. Gusejnov
    • M. K. Kurbanov
    • G. K. Safaraliev

    Fabrication, Treatment, and Testing of Materials and Structures 27 June 2010 Pages: 812 - 815

22. Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

    • A. V. Semenov
    • A. V. Lopin
    • I. N. Dmitruk

    Fabrication, Treatment, and Testing of Materials and Structures 27 June 2010 Pages: 816 - 823

23. Effect of annealing on the structure of Bi₂Te₃-Bi₂Se₃ films

    • N. M. Abdullayev
    • S. I. Mekhtiyeva
    • A. M. Kerimova

    Fabrication, Treatment, and Testing of Materials and Structures 27 June 2010 Pages: 824 - 827

24. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

    • N. V. Kryzhanovskaya
    • W. V. Lundin
    • S. O. Usov

    Fabrication, Treatment, and Testing of Materials and Structures 27 June 2010 Pages: 828 - 834