Abstract
Asymmetric heterostructures with an ultrathick waveguide based on an AlGaAs/GaAs alloy system that allow lasing at a wavelength of 905 nm have been developed and fabricated by hydride metalorganic vapor-phase epitaxy. The internal optical loss and internal quantum efficiency of semiconductor lasers based on such structures were 0.7 cm-1 and 97%, respectively. It is shown that the highest output optical power of laser diodes with antireflecting (SiO2) and reflecting (Si/SiO2) coatings deposited on untreated Fabry-Perot cavity facets obtained by cleaving in an oxygen atmosphere reached 67 W in the pulsed mode and is limited by mirror damage. Treatment of Fabry-Perot cavity facets by etching in argon plasma and the formation of coatings with passivating and oxygen-blocking GaN and Si3N4 layers allowed an increase in the maximum output optical power to 120 W. Mirror damage was not observed at the attained output optical power.
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Original Russian Text © A.N. Petrunov, A.A. Podoskin, I.S. Shashkin, S.O. Slipchenko, N.A. Pikhtin, T.A. Nalet, N.V. Fetisova, L.S. Vavilova, A.V. Lyutetskiy, P.A. Alekseev, A.N. Titkov, I.S. Tarasov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 6, pp. 817–821.
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Petrunov, A.N., Podoskin, A.A., Shashkin, I.S. et al. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors. Semiconductors 44, 789–793 (2010). https://doi.org/10.1134/S1063782610060163
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DOI: https://doi.org/10.1134/S1063782610060163