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Spin-peierls transition in the random impurity sublattice of a semiconductor

  • Electrical and Optical Properties of Semiconductors
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Abstract

A study of electron spin resonance in uncompensated Ge:As semiconductor samples in the vicinity of the insulator-metal second-order phase transiti on reveals that the interaction of spins localized at As atoms brings about a distortion of the crystal lattice and enhances the localization. This effect occurs in the range of electron concentrations n = 3 × 1017—3.7 × 1017 cm-3, just below the critical point of the phase transition. The effect is explained in the context of a model considering the spin-Peierls transition in the random impurity sublattice of the semiconductor, and its features, as compared to other known materials where the spin-Peierls transition is observed, are understood.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek & S. I. Goloshchapov

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  1. A. I. Veinger
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  2. A. G. Zabrodskii
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  3. T. V. Tisnek
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  4. S. I. Goloshchapov
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Correspondence to A. I. Veinger.

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Original Russian Text © A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek, S.I. Goloshchapov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 6, pp. 735–741.

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Veinger, A.I., Zabrodskii, A.G., Tisnek, T.V. et al. Spin-peierls transition in the random impurity sublattice of a semiconductor. Semiconductors 44, 705–711 (2010). https://doi.org/10.1134/S1063782610060035

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  • DOI: https://doi.org/10.1134/S1063782610060035

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