Abstract
It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25–2 µm thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer >1 µm thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.
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Original Russian Text © V.R. Kopach, M.V. Kirichenko,G.S. Khrypunov, R.V. Zaitsev, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 6, pp. 801–806.
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Kopach, V.R., Kirichenko, M.V., Khrypunov, G.S. et al. Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells. Semiconductors 44, 772–777 (2010). https://doi.org/10.1134/S106378261006014X
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DOI: https://doi.org/10.1134/S106378261006014X