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Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The secondary ion mass spectrometry and capacitance—voltage measurements have been used to study the mechanism of formation of the near-surface layer with a low concentration of uncompensated donors in n-GaP grown by vapor-phase epitaxy and subjected to heat treatment at different pressures of phosphorus vapors. The dependence of the thickness of the mentioned layer on the pressure of phosphorus vapors has a minimum at a pressure of (1.5 ± 0.5) × 103 Pa. It is shown that at vapor pressures above the mentioned value, the interstitial P, which forms a deep electron trap, is a suitable candidate for the role of compensating acceptor. At low pressures, the probable compensating center is the P vacancy giving rise to a deep level with the energy Ec—(0.21 ± 0.01) eV. At 700°C, the effective diffusivity of interstitial P is ≈(3 ± 1) s- 10-15 cm2/s, while that of the P vacancy is ≈(3 ± 1) × 10-14 cm2/s.

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Authors and Affiliations

  1. Research Institute for Materials of Electronic Engineering, ul. Gagarina 1, Kaluga, 248650, Russia

    Yu. K. Krutogolov

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  1. Yu. K. Krutogolov
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Correspondence to Yu. K. Krutogolov.

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Original Russian Text © Yu.K. Krutogolov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 6, pp. 782–789.

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Krutogolov, Y.K. Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors. Semiconductors 44, 752–760 (2010). https://doi.org/10.1134/S1063782610060114

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