1. On the theory of love waves in heterostructures with hexagonal symmetry

   • A. K. Morocha

   Basic Research 24 December 2010 Pages: 1625 - 1630

2. Simulation and calculation of the piezoelectric modulus of a lead zirconate-titanate thin film in a test microstructure

   • V. V. Amelichev
   • D. A. Saikin
   • M. V. Silibin

   Materials for Electronic Engineering 24 December 2010 Pages: 1631 - 1633

3. Brightness-voltage characteristics of ZnS:Mn luminescent films

   • M. K. Samokhvalov
   • M. O. Takhtenkova

   Materials for Electronic Engineering 24 December 2010 Pages: 1634 - 1636

4. Model of thermal oxidation of silicon with diffusion coefficient relaxation

   • O. V. Aleksandrov
   • A. I. Dus’

   Microelectronics Technology 24 December 2010 Pages: 1637 - 1643

5. A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure

   • N. M. Manzha

   Microelectronics Technology 24 December 2010 Pages: 1644 - 1648

6. The influence of solution-precursors on optical properties of In₂S₃ films deposited by successive ionic layer adsorption and reaction

   • S. A. Gavrilov
   • A. V. Zheleznyakova
   • N. I. Popenko

   Microelectronics Technology 24 December 2010 Pages: 1649 - 1653

7. Reversible high-speed electrostatic “contact”

   • I. L. Baginsky
   • E. G. Kostsov

   Microelectronics Technology 24 December 2010 Pages: 1654 - 1657

8. Determination of parameters of a nonlinear model of GaAs high-power MESFET field transistors

   • S. A. Bakhvalova

   Microelectronic Devices and Systems 24 December 2010 Pages: 1658 - 1661

9. Degradation of integrated schmitt triggers of the CMOS logic under the effect of ultrashort pulsed overloads

   • A. M. Bobreshov
   • A. V. Dyboi
   • G. K. Uskov

   Microelectronic Devices and Systems 24 December 2010 Pages: 1662 - 1668

10. High-power microwave LDMOS transistors for wireless data transmission technologies (Review)

    • E. V. Kuznetsov
    • A. V. Shemyakin

    Microelectronic Devices and Systems 24 December 2010 Pages: 1669 - 1674

11. Monitoring of the current-distribution uniformity in bipolar transistors from the dependence of internal-feedback factor on collector voltage

    • V. A. Sergeev
    • O. A. Dulov
    • A. A. Kulikov

    Microelectronic Devices and Systems 24 December 2010 Pages: 1675 - 1679

12. Simulation of electrical parameters of channels of silicon MOS transistors on a deformed substrate

    • V. V. Filippov
    • B. K. Petrov
    • Yu. M. Myasnyankin

    Microelectronic Devices and Systems 24 December 2010 Pages: 1680 - 1684

13. Waveguide photonic crystals with characteristics controlled with p-i-n diodes

    • D. A. Usanov
    • A. V. Skripal
    • M. K. Merdanov

    Microelectronic Devices and Systems 24 December 2010 Pages: 1685 - 1688

14. Analysis of thermal processes in piezoceramic actuator

    • A. V. Dobrynin
    • T. V. Kharitonova
    • V. K. Kazakov

    Microelectronic Devices and Systems 24 December 2010 Pages: 1689 - 1693

15. Formation and atomic force spectroscopy of AlGaN/GaN nanoheterostructures

    • K. A. Tsarik
    • V. K. Nevolin

    Nanotechnology 24 December 2010 Pages: 1694 - 1698

16. Radiation effects in nanoelectronic elements

    • D. V. Gromov
    • V. V. Elesin
    • V. K. Nevolin

    Nanotechnology 24 December 2010 Pages: 1699 - 1702

17. Photoactivation of the processes of formation of nanostructures by local anodic oxidation of a titanium film

    • O. A. Ageev
    • N. I. Alyab’eva
    • V. A. Smirnov

    Nanotechnology 24 December 2010 Pages: 1703 - 1708

18. Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films

    • I. V. Sagunova
    • V. I. Shevyakov
    • A. N. Belov

    Nanotechnology 24 December 2010 Pages: 1709 - 1713

19. Fabrication of nanosized superconductor structures with a critical temperature exceeding 100 K

    • Yu. E. Grigorashvili
    • A. V. Bukhlin
    • I. V. Veryuzhskii

    Nanotechnology 24 December 2010 Pages: 1714 - 1717

20. Thermodynamics of the formation of catalyst clusters for carbon nanotube growth

    • S. V. Bulyarskii
    • O. V. Pyatilova
    • Yu. P. Shaman

    Nanotechnology 24 December 2010 Pages: 1718 - 1722

21. Specific features of implementation of the photoconductivity decay method in measurements of recombination parameters of a semiconductor

    • M. B. Shadov

    Measurement Techniques 24 December 2010 Pages: 1723 - 1726

22. Application of short light pulses for measuring parameters of solar cells

    • A. F. Yaremchuk
    • A. V. Alekseev
    • A. V. Korotkevich

    Measurement Techniques 24 December 2010 Pages: 1727 - 1730