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Specific features of implementation of the photoconductivity decay method in measurements of recombination parameters of a semiconductor

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Abstract

Concentration of excess charge carriers as a function of time in the course of photoconductivity decay has been calculated. The calculation takes into account the local disturbance of electroneutrality, which necessitates the use of the Poisson equation in the set of equations describing the given process. A rather cumbersome nonlinear differential equation has been derived by solving the new system. Criteria have been established and with the observance of these criteria it is possible to reduce that equation to a well-known equation conventionally used to describe the process of photoconductivity decay upon termination of a pulse of light.

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Authors and Affiliations

  1. Moscow State Institute of Electronics and Mathematics (Technical University), Moscow, Russia

    M. B. Shadov

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  1. M. B. Shadov
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Correspondence to M. B. Shadov.

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Original Russian Text © M.B. Shadov, 2010, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika.

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Shadov, M.B. Specific features of implementation of the photoconductivity decay method in measurements of recombination parameters of a semiconductor. Semiconductors 44, 1723–1726 (2010). https://doi.org/10.1134/S106378261013021X

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  • DOI: https://doi.org/10.1134/S106378261013021X

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