1. Penetration (intercalation) of copper atoms under a graphene layer on iridium (111)

   • E. V. Rut’kov
   • N. R. Gall

   Atomic Structure and Nonelectronic Properties of Semiconductors 10 October 2009 Pages: 1255 - 1258

2. Fundamental absorption edge of semiconductor alloys with the direct-gap energy-band structure

   • A. N. Pikhtin
   • H. H. Hegazy

   Electronic and Optical Properties of Semiconductors 10 October 2009 Pages: 1259 - 1266

3. The short-wavelength edge of intrinsic photoluminescence in diluted GaN _x As_{1 − x} alloys

   • A. A. Gutkin
   • P. N. Brunkov
   • A. Yu. Egorov

   Electronic and Optical Properties of Semiconductors 10 October 2009 Pages: 1267 - 1270

4. The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN)

   • V. N. Brudnyi
   • A. V. Kosobutsky
   • N. G. Kolin

   Electronic and Optical Properties of Semiconductors 10 October 2009 Pages: 1271 - 1279

5. Thermoelectric and other phenomena in structures with nonequilibrium charge carriers and nanoparticles

   • V. I. Stafeev

   Semiconductor Structures, Interfaces, and Surfaces 10 October 2009 Pages: 1280 - 1287

6. Effect of surface conduction in the semiconductor electrode on the distribution of the gas-discharge current

   • V. I. Orbukh
   • N. N. Lebedeva
   • B. G. Salamov

   Semiconductor Structures, Interfaces, and Surfaces 10 October 2009 Pages: 1288 - 1291

7. Effect of deep impurity on electric characteristics of epitaxial GaAs structures

   • V. M. Kalygina
   • E. S. Slyun’ko

   Semiconductor Structures, Interfaces, and Surfaces 10 October 2009 Pages: 1292 - 1297

8. Generation of surface electromagnetic waves in semiconductors under the action of femtosecond laser pulses

   • G. A. Martsinovsky
   • G. D. Shandybina
   • P. K. Kashkarov

   Semiconductor Structures, Interfaces, and Surfaces 10 October 2009 Pages: 1298 - 1304

9. Plane two-barrier resonance-tunneling structures: Resonance energies and resonance widths of quasi-stationary electron states

   • N. V. Tkach
   • Yu. A. Seti

   Low-Dimensional Systems 10 October 2009 Pages: 1305 - 1315

10. Suppression of electron transitions between split energy levels in three-barrier structures by a varying space-charge field

    • A. B. Pashkovskii

    Low-Dimensional Systems 10 October 2009 Pages: 1316 - 1321

11. Effect of irradiation on the properties of nanocrystalline silicon carbide films

    • A. V. Semenov
    • A. V. Lopin
    • V. N. Boriskin

    Low-Dimensional Systems 10 October 2009 Pages: 1322 - 1327

12. Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K

    • A. N. Petrovskaya
    • V. I. Zubkov

    Low-Dimensional Systems 10 October 2009 Pages: 1328 - 1333

13. Study of optical characteristics of structures with strongly strained In _x Ga_{1 − x} As quantum wells

    • D. A. Vinokurov
    • V. A. Kapitonov
    • I. S. Tarasov

    Low-Dimensional Systems 10 October 2009 Pages: 1334 - 1337

14. Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers

    • N. A. Bogoslowsky
    • K. D. Tsendin

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 10 October 2009 Pages: 1338 - 1342

15. Conductivity of layers of a chalcogenide glassy semiconductor Ge₂Sb₂Te₅ in high electric fields

    • É. A. Lebedev
    • S. A. Kozykhin
    • L. P. Kazakova

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 10 October 2009 Pages: 1343 - 1346

16. The crucial role of singlet oxygen in the formation of photoluminescence from nanoporous silicon

    • L. V. Belyakov
    • Yu. S. Vainshtein
    • O. M. Sreseli

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 10 October 2009 Pages: 1347 - 1350

17. Manifestation of the injection mechanism of efficiency droop in the temperature dependence of the external quantum efficiency of AlInGaN-based light-emitting diodes

    • A. S. Pavluchenko
    • I. V. Rozhansky
    • D. A. Zakheim

    Physics of Semiconductor Devices 10 October 2009 Pages: 1351 - 1355

18. Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure

    • N. S. Grushko
    • L. N. Vostretsova
    • A. S. Kagarmanov

    Physics of Semiconductor Devices 10 October 2009 Pages: 1356 - 1362

19. Properties of interfaces in GaInP solar cells

    • A. S. Gudovskikh
    • N. A. Kalyuzhnyy
    • V. M. Andreev

    Physics of Semiconductor Devices 10 October 2009 Pages: 1363 - 1368

20. Quenching of lasing in high power semiconductor laser

    • S. O. Slipchenko
    • D. A. Vinokurov
    • I. S. Tarasov

    Physics of Semiconductor Devices 10 October 2009 Pages: 1369 - 1372

21. Effect of silicon-surface orientation in the bulk model of thermal oxidation

    • O. V. Aleksandrov
    • A. I. Dusj

    Fabrication, Treatment, and Testing of Materials and Structures 10 October 2009 Pages: 1373 - 1378

22. Growth and annealing of CdZnTe:Cl crystals with different content of Zn for nuclear detectors

    • N. K. Zelenina
    • V. P. Karpenko
    • A. A. Tomasov

    Fabrication, Treatment, and Testing of Materials and Structures 10 October 2009 Pages: 1379 - 1386

23. Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

    • N. A. Bert
    • A. L. Kolesnikova
    • V. V. Chaldyshev

    Fabrication, Treatment, and Testing of Materials and Structures 10 October 2009 Pages: 1387 - 1393

24. Features of simultaneous diffusion of boron and gadolinium in silicon from nanoscale hybrid organic-inorganic films

    • I. V. Smirnova
    • O. A. Shilova
    • A. E. Gamarts

    Fabrication, Treatment, and Testing of Materials and Structures 10 October 2009 Pages: 1394 - 1399